SWP031R06ET MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SWP031R06ET
Código: SW031R06ET
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 266 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 148 nC
Tiempo de subida (tr): 231 nS
Conductancia de drenaje-sustrato (Cd): 990 pF
Resistencia entre drenaje y fuente RDS(on): 0.0038 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SWP031R06ET
SWP031R06ET Datasheet (PDF)
swp031r06et swb031r06et.pdf
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swp035r10e6s.pdf
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swb038r10es swp038r10es.pdf
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SW030R04VTN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 BVDSS : 40VTO-263 High ruggednessID : 130A Low RDS(ON) (Typ 3.7m)@VGS=4.5VRDS(ON) : 3.7m@VGS=4.5V(Typ 2.8m)@VGS=10V Low Gate Charge (Typ 120nC)2.8m@VGS=10V Improved dv/dt Capability 1 12 2 100% Avalanche Tested23 3 Application:Power Supply,LED Boost1. Gate 2.
sw038r10es swb038r10es swp038r10es swt038r10es.pdf
SW038R10ES N-channel Enhanced mode TO-263/TO-220/TO-247 MOSFET Features TO-263 TO-220 TO-247 BVDSS : 100V High ruggedness ID : 120A Low RDS(ON) (Typ 3.6m)@VGS=10V RDS(ON) : 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 2 Application:Synchronous Rectification, 2 2 3 3 3 Inverter ,
swp038r04vt.pdf
SW038R04VT N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS : 40V High ruggedness Low RDS(ON) (Typ 4.3m)@VGS=4.5V ID : 95A (Typ 3.8m)@VGS=10V RDS(ON) : 4.3m@VGS=4.5V Low Gate Charge (Typ 105nC) Improved dv/dt Capability 3.8m@VGS=10V 100% Avalanche Tested 1 2 Application:DC-DC Converter, Motor Control, 3 2 Sy
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