SWP058R75E7T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SWP058R75E7T Datasheet (PDF)

..1. Size:820K samwin
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SW058R75E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 75V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des

6.1. Size:823K samwin
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SW058R72E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 72V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des

7.1. Size:833K samwin
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SW058R06E7TN-channel Enhanced mode TO-220/TO-263 MOSFETTO-220 TO-263FeaturesBVDSS : 60VID : 120A High ruggedness Low RDS(ON) (Typ 5.8m)@VGS=10VRDS(ON) : 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 21 12 2 100% Avalanche Tested3 3 Application:Telecom, Computer, Inverter11. Gate 2. Drain 3. Source3General Description

7.2. Size:813K samwin
swp058r65e7t swb058r65e7t.pdf pdf_icon

SW058R65E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 65V High ruggedness Low RDS(ON) (Typ 6.1m)@VGS=10V ID : 100A Low Gate Charge (Typ 104nC)RDS(ON) : 6.1m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.

Otros transistores... SWP050R68E8T , SWP050R95E8S , SWP051R08ES , SWP055R68E7T , SWP056R68E7T , SWP058R06E7T , SWP058R65E7T , SWP058R72E7T , AON6414A , SWP060R65E7T , SWP060R68E7T , SWP062R08E8T , SWP062R68E7T , SWP065R68E7T , SWP066R68E7T , SWP066R72E7T , SWP068R08E8T .