SWP066R68E7T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SWP066R68E7T
   Código: SW066R68E7T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 195.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 68 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 85 nC
   trⓘ - Tiempo de subida: 74 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET SWP066R68E7T

SWP066R68E7T Datasheet (PDF)

..1. Size:821K samwin
swp066r68e7t.pdf

SW066R68E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 68V High ruggednessID : 100A Low RDS(ON) (Typ 6.9m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :6.9m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Descr

7.1. Size:835K samwin
swp066r72e7t.pdf

SW066R72E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 72V High ruggednessID : 100A Low RDS(ON) (Typ 6.9m)@VGS=10V Low Gate Charge (Typ 89nC)RDS(ON) :6.9m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Descr

9.1. Size:784K samwin
swha069r10vs swi069r10vs swd069r10vs swp069r10vs swu069r10vs.pdf

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9.0m)@VGS=4.5V ID : 70A 1 8 Low RDS(ON) (Typ 7.1m)@VGS=10V 2 7 6 3 RDS(ON) : 9.0m@VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m@VGS=10V

9.2. Size:775K samwin
swp068r68e7t swb068r68e7t.pdf

SW068R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 90A Low RDS(ON) (Typ 6.8m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) :6.8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.So

9.3. Size:768K samwin
swp065r68e7t swb065r68e7t.pdf

SW065R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS : 68V High ruggedness Low RDS(ON) (Typ 6.3m)@VGS=10V ID : 100A Low Gate Charge (Typ 75nC) RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1

9.4. Size:772K samwin
swp062r68e7t swb062r68e7t.pdf

SW062R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 100A Low RDS(ON) (Typ 6.2m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :6.2m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

9.5. Size:813K samwin
swp060r65e7t swb060r65e7t.pdf

SW060R65E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 65V High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V ID : 110A Low Gate Charge (Typ 94nC)RDS(ON) : 5.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

9.6. Size:816K samwin
swp060r68e7t swb060r68e7t.pdf

SW060R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V ID : 110A Low Gate Charge (Typ 94nC)RDS(ON) : 5.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

9.7. Size:853K samwin
swp068r08et swb068r08et.pdf

SW068R08ETN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesBVDSS : 80VTO-220TO-263 High ruggedness ID : 120A Low RDS(ON) (Typ 7.1m)@VGS=10VRDS(ON) : 7.1m Low Gate Charge (Typ 59nC) Improved dv/dt Capability 21 100% Avalanche Tested1223 Application: Synchronous Rectification, 13Li Battery Protect Board, Inverter1. Gate 2. Drain

9.8. Size:570K samwin
swp069r06vt.pdf

SW069R06VT N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS : 60V High ruggedness ID : 120A Low RDS(ON) (Typ 6.8m)@VGS=4.5V (Typ 5.6m)@VGS=10V RDS(ON) :6.8m@VGS=4.5V Low Gate Charge (Typ 80nC) 1 Improved dv/dt Capability 5.6m@VGS=10V 2 100% Avalanche Tested 3 D Application:Synchronous Rectification, Li Batter

9.9. Size:782K samwin
swp068r08e8t.pdf

SW068R08E8TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 80V High ruggednessID : 106A Low RDS(ON) (Typ 6.7m)@VGS=10V Low Gate Charge (Typ 130nC)RDS(ON) : 6.7m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des

9.10. Size:708K samwin
swha069r10vs swi069r10vs swd069r10vs swp069r10vs.pdf

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS : 100V High ruggedness ID : 70A Low RDS(ON) (Typ 7.1m)@VGS=10V RDS(ON) : 7.1m@VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m@VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 A

9.11. Size:804K samwin
swp062r08e8t swb062r08e8t.pdf

SW062R08E8TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggednessID : 125A Low RDS(ON) (Typ 5.9m)@VGS=10VRDS(ON) : 5.9m Low Gate Charge (Typ 137nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 2 Application:Synchronous Rectification,3 31Li Battery Protect Board, Inverter1. Gate 2.Drain 3

9.12. Size:772K cn super semi
swp062r68e7t swb062r68e7t.pdf

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