FDS6986AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDS6986AS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 6.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 12 nC
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de FDS6986AS MOSFET
FDS6986AS Datasheet (PDF)
fds6986as.pdf

March 2005 FDS6986AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6986AS is designed to replace two single SO- Q2: Optimized to minimize conduction losses 8 MOSFETs and Schottky diode in synchronous Includes SyncFET Schottky body diode DC:DC power supplies that provide various peripheral 7.9A, 30V RDS(on) = 20 m @ VG
fds6984as.pdf

JMay 2008FDS6984AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6984AS is designed to replace two single Q2: Optimized to minimize conduction losses SO-8 MOSFETs and Schottky diode in synchronous Includes SyncFET Schottky diode DC:DC power supplies that provide various peripheral 8.5A, 30V RDS(on) max= 20 m @ VGS
fds6982.pdf

June 1999FDS6982Dual N-Channel, Notebook Power Supply MOSFETGeneral DescriptionFeaturesThis part is designed to replace two single SO-8 MOSFETs Q2: 8.6A, 30V. RDS(on) = 0.015 @ VGS = 10Vin synchronous DC:DC power supplies that provide theRDS(on) = 0.020 @ VGS = 4.5Vvarious peripheral voltage rails required in notebookcomputers and other battery powered electronic
fds6982as.pdf

May 2008tmMFDS6982AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6982AS is designed to replace two single SO- Q2: Optimized to minimize conduction losses 8 MOSFETs and Schottky diode in synchronous Includes SyncFET Schottky body diode DC:DC power supplies that provide various peripheral 8.6A, 30V RDS(on) max= 13.5m @
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .



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