FDS6990AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMarch 2010FDS6990ASDual 30V N-Channel PowerTrench SyncFETFeatures General Description 7.5 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFETRDS(ON) = 28 m @ VGS = 4.5 V and two Schottky diodes in synchronous DC:DC power sup-plies. This 30V MOSFET is designed to maximize power con- Includes SyncFET Schottky diode versi

MMarch 2010FDS6990ASDual 30V N-Channel PowerTrench SyncFETFeatures General Description 7.5 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFETRDS(ON) = 28 m @ VGS = 4.5 V and two Schottky diodes in synchronous DC:DC power sup-plies. This 30V MOSFET is designed to maximize power con- Includes SyncFET Schottky diode versi

June 2003FDS6990ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 7.5 A, 30 V. RDS(ON) = 18 m @ VGS = 10 Vusing Fairchild Semiconductors advancedRDS(ON) = 23 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switc

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2006 FDS6994S Dual Notebook Power Supply N-Channel PowerTrench SyncFet General Description Features The FDS6994S is designed to replace two single SO-8 Q2: Optimized to minimize conduction losses MOSFETs and Schottky diode in synchronous DC:DC Includes SyncFET Schottky body diode power supplies that provide various peripheral voltages 8.2A, 30V