SWT47N60K Todos los transistores

 

SWT47N60K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SWT47N60K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 328.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 99 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO247
 

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SWT47N60K Datasheet (PDF)

 ..1. Size:582K  samwin
 swt47n60k.pdf pdf_icon

SWT47N60K

SW47N60K N-channel Enhanced mode TO-247 MOSFET Features BVDSS : 600V TO-247 ID : 47A High ruggedness Low RDS(ON) (Typ 56m)@VGS=10V RDS(ON) :56m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO

 7.1. Size:810K  samwin
 sw47n65k2 swt47n65k2.pdf pdf_icon

SWT47N60K

SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 47A High ruggedness RDS(ON) : 56m Low RDS(ON) (Typ 56m)@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED, UPS, Charge, Servicer 1. Gate 2. Drain 3. Source 3 General Description This p

 7.2. Size:748K  samwin
 swt47n65k2.pdf pdf_icon

SWT47N60K

SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 47A High ruggedness RDS(ON) : 56m Low RDS(ON) (Typ 56m)@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED, UPS, Charger, Servicer 1. Gate 2. Drain 3. Source 3 General Description This

 7.3. Size:739K  samwin
 swt47n65k2f.pdf pdf_icon

SWT47N60K

SW47N65K2F N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V ID : 47A High ruggedness Low RDS(ON) (Typ 59m)@VGS=10V RDS(ON) : 59m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application: Charger, UPS , LED , Servicer 1. Gate 2. Drain 3. Source 3 General Description Th

MOSTRAR MÁS

Otros transistores... SWT38N65K , SWT38N65K2 , SWT38N65K2F , SWT38N70K , SWT45N60K2 , SWT45N60K2F , SWT45N65K2 , SWT45N65K2F , AO4468 , SWT47N65K , SWT47N65K2F , SWT47N65KF , SWT47N70K , SWT50N65LF , SWT69N65K2 , SWT69N65K2F , SWU069R10VS .

History: IRF7807D1PBF | SM6A24NSU | STD100NH02LT4 | RSM5853P | IXTQ450P2 | NCE65NF068LL | IXTM10N60

 

 
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