SWT47N60K Todos los transistores

 

SWT47N60K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SWT47N60K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 328.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 47 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 99 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: TO247

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SWT47N60K datasheet

 ..1. Size:582K  samwin
swt47n60k.pdf pdf_icon

SWT47N60K

SW47N60K N-channel Enhanced mode TO-247 MOSFET Features BVDSS 600V TO-247 ID 47A High ruggedness Low RDS(ON) (Typ 56m )@VGS=10V RDS(ON) 56m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO

 7.1. Size:810K  samwin
sw47n65k2 swt47n65k2.pdf pdf_icon

SWT47N60K

SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS 650V Features ID 47A High ruggedness RDS(ON) 56m Low RDS(ON) (Typ 56m )@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED, UPS, Charge, Servicer 1. Gate 2. Drain 3. Source 3 General Description This p

 7.2. Size:748K  samwin
swt47n65k2.pdf pdf_icon

SWT47N60K

SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS 650V Features ID 47A High ruggedness RDS(ON) 56m Low RDS(ON) (Typ 56m )@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED, UPS, Charger, Servicer 1. Gate 2. Drain 3. Source 3 General Description This

 7.3. Size:739K  samwin
swt47n65k2f.pdf pdf_icon

SWT47N60K

SW47N65K2F N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS 650V ID 47A High ruggedness Low RDS(ON) (Typ 59m )@VGS=10V RDS(ON) 59m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application Charger, UPS , LED , Servicer 1. Gate 2. Drain 3. Source 3 General Description Th

Otros transistores... SWT38N65K , SWT38N65K2 , SWT38N65K2F , SWT38N70K , SWT45N60K2 , SWT45N60K2F , SWT45N65K2 , SWT45N65K2F , 60N06 , SWT47N65K , SWT47N65K2F , SWT47N65KF , SWT47N70K , SWT50N65LF , SWT69N65K2 , SWT69N65K2F , SWU069R10VS .

History: NTLGD3502N | WSF50N10 | IXFA10N60P | WMM020N10HGS

 

 

 

 

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