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S40N09S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: S40N09S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 93 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 275 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

S40N09S Datasheet (PDF)

 ..1. Size:321K  cn si-tech
s40n09r s40n09s s40n09rn s40n09rp.pdf pdf_icon

S40N09S

S40N09R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=40V,ID=90A DC Motor Control Rds(on)(typ)=5.8m@Vgs=4.5V DC-DC Converters Rds(on)(typ)=4.6m@Vgs=10V BMS 100% Avalanche Tested SMPS 100% Rg Tested Automotive Environment Lead-Free (RoHS Compliant) Internal Circuit and Pin Description

 9.1. Size:63K  china
cs40n06.pdf pdf_icon

S40N09S

CS40N06N PD TC=25 150 W 1.2 W/ID VGS=10V,TC=25 40 AIDM 60 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 0.83 /W BVDSS VGS=0V,ID=0.25mA 60 VRDS on VGS=10V,ID=20A 0.055 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V

 9.2. Size:577K  bruckewell
ms40n06.pdf pdf_icon

S40N09S

MS40N06 60V N-Channel MOSFET GENERAL DESCRIPTION The MS40N06 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6006M6 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. FEATURES Ad

 9.3. Size:980K  cn si-tech
s40n08m.pdf pdf_icon

S40N09S

S40N08MSI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures ApplicationsV =40V,I =78ADS DDC Motor ControlRds(on)(typ)=6m@Vgs=4.5VDC-DC ConvertersRds(on)(typ)=4.8m@Vgs=10VBMS100% Avalanche TestedSMPS100% Rg TestedAutomotive EnvironmentLead-Free (RoHS Compliant)Internal Circuit and Pin Description

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: WMX4N150D1 | MTC2590V8 | P1306ED | KI3055 | BUZ325 | BUP69 | 2SK1404

 

 
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