S40N12M Todos los transistores

 ..1. Size:978K  cn si-tech
 s40n12m.pdf

S40N12M SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications V =40V,I =120A DS D DC Motor Control Rds(on)(typ)=3.5m @Vgs=4.5V DC-DC Converters Rds(on)(typ)=3m @Vgs=10V BMS 100% Avalanche Tested SMPS 100% Rg Tested Automotive Environment Lead-Free (RoHS Compliant) Internal Circuit and Pin Descriptio

 8.1. Size:518K  cn xiner
 xns40n120t.pdf

Xiner XNS40N120T 1200V 40A Trench-FS IGBT Features Advanced Trench +FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, typical data is 1.8V @ 40A. Short-Circuit withstand time-10uS Easy parallel switching capability due to positive Temperature coefficient in Vce. Schematic Diagram Fast switching High input impedance Pb- Free pro

 9.1. Size:368K  fairchild semi
 rf1s40n10.pdf

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power Features MOSFETs 40A, 100V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040 the MegaFET process. This process, which uses feature UIS Rating Curve sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

 9.2. Size:369K  fairchild semi
 rfg40n10 rfp40n10 rf1s40n10-sm.pdf

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power Features MOSFETs 40A, 100V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040 the MegaFET process. This process, which uses feature UIS Rating Curve sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

 9.3. Size:410K  intersil
 rfg40n10le rfp40n10le rf1s40n10lesm.pdf

RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level Features N-Channel Power MOSFETs 40A, 100V These N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes appr

 9.4. Size:2339K  cn si-tech
 s40n14r s40n14s s40n14rn s40n14rp.pdf

S40N14R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=40V,ID=140A DC Motor Control Rds(on)(typ)=3.4m @Vgs=4.5V DC-DC Converters Rds(on)(typ)=2.8m @Vgs=10V BMS 100% Avalanche Tested SMPS 100% Rg Tested Automotive Environment Lead-Free (RoHS Compliant) Internal Circuit and Pin Description

 9.5. Size:1130K  cn hmsemi
 hms40n10d.pdf

HMS40N10D N-Channel Super Trench Power MOSFET Description The HMS40N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectifi

 9.6. Size:271K  inchange semiconductor
 s40n14s.pdf

isc N-Channel MOSFET Transistor S40N14S FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R 3.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM