S45N17R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: S45N17R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 201 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 170 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 1066 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de S45N17R MOSFET
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S45N17R datasheet
s45n17r s45n17s s45n17rn s45n17rp.pdf
S45N17R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=45V,ID=170A DC Motor Control Rds(on)(typ)=2.8m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D D
hms45n15d.pdf
HMS45N15D N-Channel Super Trench Power MOSFET Description The HMS45N15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectifi
hms45n15k.pdf
N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectifi
Otros transistores... S40N09R , S40N09RN , S40N09RP , S40N09S , S40N12M , S40N14R , S40N14RN , S40N14RP , AO3407 , S45N17RN , S45N17RP , S45N17S , S60N06M , S60N10M , S60N15R , S60N15RN , S60N15RP .
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