2SK2931 Todos los transistores

 ..1. Size:87K  renesas
 2sk2931.pdf

2SK2931 Silicon N Channel MOS FET High Speed Power Switching REJ03G1045-0500 (Previous ADE-208-554C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS =0.010 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source

 ..2. Size:289K  inchange semiconductor
 2sk2931.pdf

isc N-Channel MOSFET Transistor 2SK2931 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 0.1. Size:101K  renesas
 rej03g1045 2sk2931ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:121K  renesas
 2sk2937.pdf

2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 (Previous ADE-208-560C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS =0.026 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2

 8.2. Size:109K  renesas
 rej03g1052 2sk2938lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:3170K  renesas
 2sk293.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:121K  renesas
 2sk2936.pdf

2SK2936 Silicon N Channel MOS FET High Speed Power Switching REJ03G1050-0400 (Previous ADE-208-559B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.010 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2

 8.5. Size:87K  renesas
 2sk2930.pdf

2SK2930 Silicon N Channel MOS FET High Speed Power Switching REJ03G1044-0500 (Previous ADE-208-553C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS =0.020 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source

 8.6. Size:95K  renesas
 2sk2938.pdf

2SK2938(L), 2SK2938(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1052-0400 (Previous ADE-208-561B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.026 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(

 8.7. Size:102K  renesas
 rej03g1044 2sk2930ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:87K  renesas
 2sk2933.pdf

2SK2933 Silicon N Channel MOS FET High Speed Power Switching REJ03G1047-0400 (Previous ADE-208-556B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.040 typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00 Sep 07, 2

 8.9. Size:136K  renesas
 rej03g1051 2sk2937ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.10. Size:87K  renesas
 2sk2934.pdf

2SK2934 Silicon N Channel MOS FET High Speed Power Switching REJ03G1048-0400 (Previous ADE-208-557B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.026 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2

 8.11. Size:121K  renesas
 2sk2935.pdf

2SK2935 Silicon N Channel MOS FET High Speed Power Switching REJ03G1049-0400 (Previous ADE-208-588B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.020 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2

 8.12. Size:87K  renesas
 2sk2932.pdf

2SK2932 Silicon N Channel MOS FET High Speed Power Switching REJ03G1046-0400 (Previous ADE-208-555B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2

 8.13. Size:142K  renesas
 rej03g1053 2sk2939lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.14. Size:128K  renesas
 2sk2939.pdf

2SK2939(L), 2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1053-0600 (Previous ADE-208-562D) Rev.6.00 Sep 07, 2005 Features Low on-resistance RDS =0.020 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(

 8.15. Size:279K  inchange semiconductor
 2sk2937.pdf

isc N-Channel MOSFET Transistor 2SK2937 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.16. Size:279K  inchange semiconductor
 2sk2936.pdf

isc N-Channel MOSFET Transistor 2SK2936 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.17. Size:288K  inchange semiconductor
 2sk2930.pdf

isc N-Channel MOSFET Transistor 2SK2930 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.18. Size:279K  inchange semiconductor
 2sk2933.pdf

isc N-Channel MOSFET Transistor 2SK2933 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 52m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.19. Size:282K  inchange semiconductor
 2sk2938l.pdf

isc N-Channel MOSFET Transistor 2SK2938L FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.20. Size:356K  inchange semiconductor
 2sk2939s.pdf

isc N-Channel MOSFET Transistor 2SK2939S FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.21. Size:356K  inchange semiconductor
 2sk2938s.pdf

isc N-Channel MOSFET Transistor 2SK2938S FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.22. Size:282K  inchange semiconductor
 2sk2939l.pdf

isc N-Channel MOSFET Transistor 2SK2939L FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.23. Size:279K  inchange semiconductor
 2sk2934.pdf

isc N-Channel MOSFET Transistor 2SK2934 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.24. Size:279K  inchange semiconductor
 2sk2935.pdf

isc N-Channel MOSFET Transistor 2SK2935 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.25. Size:278K  inchange semiconductor
 2sk2932.pdf

isc N-Channel MOSFET Transistor 2SK2932 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d