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2SK2931 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2931

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 45 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 2200 pF

Resistencia drenaje-fuente RDS(on): 0.015 Ohm

Empaquetado / Estuche: TO220AB

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2SK2931 Datasheet (PDF)

1.1. rej03g1045 2sk2931ds.pdf Size:101K _renesas

2SK2931
2SK2931

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.2. 2sk2931.pdf Size:87K _renesas

2SK2931
2SK2931

2SK2931 Silicon N Channel MOS FET High Speed Power Switching REJ03G1045-0500 (Previous: ADE-208-554C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS =0.010 ? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 S 3

 4.1. 2sk293.pdf Size:3170K _upd

2SK2931
2SK2931

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk2932.pdf Size:87K _renesas

2SK2931
2SK2931

2SK2932 Silicon N Channel MOS FET High Speed Power Switching REJ03G1046-0400 (Previous: ADE-208-555B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.055 ? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00

 4.3. rej03g1044 2sk2930ds.pdf Size:102K _renesas

2SK2931
2SK2931

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. 2sk2935.pdf Size:121K _renesas

2SK2931
2SK2931

2SK2935 Silicon N Channel MOS FET High Speed Power Switching REJ03G1049-0400 (Previous: ADE-208-588B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.020 ? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00

 4.5. 2sk2939.pdf Size:128K _renesas

2SK2931
2SK2931

2SK2939(L), 2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1053-0600 (Previous: ADE-208-562D) Rev.6.00 Sep 07, 2005 Features Low on-resistance RDS =0.020 ? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(L)) (Packag

4.6. rej03g1051 2sk2937ds.pdf Size:136K _renesas

2SK2931
2SK2931

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. rej03g1053 2sk2939lsds.pdf Size:142K _renesas

2SK2931
2SK2931

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.8. 2sk2937.pdf Size:121K _renesas

2SK2931
2SK2931

2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 (Previous: ADE-208-560C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS =0.026 ? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3 Rev.4.00

4.9. 2sk2934.pdf Size:87K _renesas

2SK2931
2SK2931

2SK2934 Silicon N Channel MOS FET High Speed Power Switching REJ03G1048-0400 (Previous: ADE-208-557B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.026 ? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00

4.10. 2sk2936.pdf Size:121K _renesas

2SK2931
2SK2931

2SK2936 Silicon N Channel MOS FET High Speed Power Switching REJ03G1050-0400 (Previous: ADE-208-559B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.010 ? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00

4.11. 2sk2938.pdf Size:95K _renesas

2SK2931
2SK2931

2SK2938(L), 2SK2938(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1052-0400 (Previous: ADE-208-561B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.026 ? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(L)) (Packag

4.12. 2sk2930.pdf Size:87K _renesas

2SK2931
2SK2931

2SK2930 Silicon N Channel MOS FET High Speed Power Switching REJ03G1044-0500 (Previous: ADE-208-553C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS =0.020 ? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 S 3

4.13. 2sk2933.pdf Size:87K _renesas

2SK2931
2SK2931

2SK2933 Silicon N Channel MOS FET High Speed Power Switching REJ03G1047-0400 (Previous: ADE-208-556B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.040 ? typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00 Sep 07, 2005 page 1 of

4.14. rej03g1052 2sk2938lsds.pdf Size:109K _renesas

2SK2931
2SK2931

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Otros transistores... 2SK2885 , 2SK2912 , 2SK2925 , 2SK2926 , 2SK2927 , 2SK2928 , 2SK2929 , 2SK2930 , IRFZ24N , 2SK2932 , 2SK2933 , 2SK2934 , 2SK2935 , 2SK2936 , 2SK2937 , 2SK2938 , 2SK2939 .

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