S80N10RP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: S80N10RP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.6 V
   Qgⓘ - Carga de la puerta: 56 nC
   trⓘ - Tiempo de subida: 43 nS
   Cossⓘ - Capacitancia de salida: 446 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0076 Ohm
   Paquete / Cubierta: TO220

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S80N10RP Datasheet (PDF)

..1. Size:2299K cn si-tech
s80n10r s80n10s s80n10rn s80n10rp.pdf

S80N10R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=80V,ID=100A DC Motor Control Rds(on)(typ)=6.3m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD

7.1. Size:495K 1
s80n10r s80n10s.pdf

SI-TECH SEMICONDUCTOR CO.,LTD S80N10R/S N-Channel MOSFET Features 80V,100A,Rds(on)(typ)=5.8m @Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Techs advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-st

8.1. Size:1114K jilin sino
jcs80n10i.pdf

N N-CHANNEL MOSFET JCS80N10I MAIN CHARACTERISTICS Package ID 80A VDSS 100V Rdson-typ - 9.5m (@Vgs=10V Qg-typ 70nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive ap

8.2. Size:914K cn hmsemi
hms80n10ka.pdf

HMS80N10KAN-Channel Super Trench Power MOSFET Description The HMS80N10AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

8.3. Size:995K cn hmsemi
hms80n10.pdf

HMS80N10N-Channel Super Trench Power MOSFET Description The HMS80N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat

8.4. Size:574K cn hmsemi
hms80n10al.pdf

HMS80N10ALN-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

8.5. Size:725K cn hmsemi
hms80n10d.pdf

HMS80N10DN-Channel Super Trench Power MOSFET Description The HMS80N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific

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