S85N042RN Todos los transistores

 ..1. Size:344K  cn si-tech
 s85n042r s85n042s s85n042rn s85n042rp.pdf

S85N042R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=85V,ID=128A DC Motor Control Rds(on)(typ)=4.2m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D

 8.1. Size:275K  cn si-tech
 s85n048s.pdf

S85N048S SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=85V,ID=120A DC Motor Control Rds(on)(typ)=4.8m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G

 9.1. Size:719K  bruckewell
 ms85n06.pdf

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS85N06 60V N-Channel MOSFET FEATURES RDS(on) (Max 0.013 )@VGS=10V Gate Charge (Typical 70nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175 C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25 C unless o

 9.2. Size:169K  semihow
 hrs85n08k.pdf

Jan 2016 BVDSS = 80 V RDS(on) typ = 7 HRS85N08K ID = 110 A 80V N-Channel Trench MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 75nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 7 (Typ.) @VGS=10V 100% Avalanche Tested Absol

 9.3. Size:449K  cn hmsemi
 hms85n03ed.pdf

HMS85N03ED N-Channel Super Trench Power MOSFET Description The HMS85N03ED uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif