S85N048S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: S85N048S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 164 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 45 nC
   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 1645 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm
   Paquete / Cubierta: TO263

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S85N048S Datasheet (PDF)

..1. Size:275K cn si-tech
s85n048s.pdf

S85N048S SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=85V,ID=120A DC Motor Control Rds(on)(typ)=4.8m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg TestedSMPSLead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D DG G

8.1. Size:344K cn si-tech
s85n042r s85n042s s85n042rn s85n042rp.pdf

S85N042R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=85V,ID=128A DC Motor Control Rds(on)(typ)=4.2m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D

9.1. Size:719K bruckewell
ms85n06.pdf

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS85N06 60V N-Channel MOSFET FEATURES RDS(on) (Max 0.013 )@VGS=10V Gate Charge (Typical 70nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25C unless o

9.2. Size:169K semihow
hrs85n08k.pdf

Jan 2016BVDSS = 80 VRDS(on) typ = 7 HRS85N08K ID = 110 A80V N-Channel Trench MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 75nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 7 (Typ.) @VGS=10V 100% Avalanche TestedAbsol

9.3. Size:449K cn hmsemi
hms85n03ed.pdf

HMS85N03EDN-Channel Super Trench Power MOSFET Description The HMS85N03ED uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

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