HGA082N10M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HGA082N10M Datasheet (PDF)

..1. Size:800K cn hunteck
hga082n10m.pdf pdf_icon

HGA082N10M P-1100V N-Ch Power MOSFET100 VFeature VDS6.4RDS(on),typ m Optimized for high speed smooth switching8.2RDS(on),max m Enhanced Body diode dv/dt capability48 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitPin

9.1. Size:992K cn hunteck
hga080n10a.pdf pdf_icon

P-1HGA080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching7.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability43.5 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

9.2. Size:906K cn hunteck
hga080n10al.pdf pdf_icon

HGA080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level7.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness45 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

9.3. Size:988K cn hunteck
hga080n10s.pdf pdf_icon

HGA080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability7.3RDS(on),typ mW Enhanced Avalanche Ruggedness42 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

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