HGB012N08A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGB012N08A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 429 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 240 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 2871 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0012 Ohm

Encapsulados: TO-263-7

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HGB012N08A datasheet

 ..1. Size:1002K  cn hunteck
hgb012n08a.pdf pdf_icon

HGB012N08A

P-1 HGB012N08A 80V N-Ch Power MOSFET Feature High Speed Power Smooth Switching 80 V VDS Enhanced Body diode dv/dt capability 0.9 RDS(on),typ mW Enhanced Avalanche Ruggedness 428 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 240 A ID (Package Limited) Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Cir

 7.1. Size:1004K  cn hunteck
hgb012ne6a hgk012ne6a.pdf pdf_icon

HGB012N08A

, P-1 HGB012NE6A HGK012NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Smooth Switching TO-263 1 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 417 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free Application Synchronous Rectification

 9.1. Size:1003K  cn hunteck
hgb017n10s.pdf pdf_icon

HGB012N08A

HGB017N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 1.4 RDS(on),typ mW Enhanced Avalanche Ruggedness 354 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 240 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High S

 9.2. Size:863K  cn hunteck
hgb016n06s hgk018n06s hgp019n06s.pdf pdf_icon

HGB012N08A

HGB016N06S , HGK018N06S P-1 HGP019N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.45 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.55 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.67 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 340 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited)

Otros transistores... HGA190N15S, HGA190N15SL, HGA195N15S, HGA1K2N20ML, HGA1K2N25ML, HGA2K4N25ML, HGA320N20S, HGB009NE6A, AO3407, HGB012NE6A, HGK012NE6A, HGB014N08A, HGK014N08A, HGB016N06S, HGK018N06S, HGP019N06S, HGB016NE6A