HGB012N08A Todos los transistores

 

HGB012N08A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGB012N08A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 429 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 240 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 2871 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0012 Ohm
   Paquete / Cubierta: TO-263-7
 

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HGB012N08A Datasheet (PDF)

 ..1. Size:1002K  cn hunteck
 hgb012n08a.pdf pdf_icon

HGB012N08A

P-1HGB012N08A80V N-Ch Power MOSFETFeature High Speed Power Smooth Switching80 VVDS Enhanced Body diode dv/dt capability0.9RDS(on),typ mW Enhanced Avalanche Ruggedness428 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested240 AID (Package Limited) Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Cir

 7.1. Size:1004K  cn hunteck
 hgb012ne6a hgk012ne6a.pdf pdf_icon

HGB012N08A

, P-1HGB012NE6A HGK012NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Smooth SwitchingTO-263 1RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.2RDS(on),typ mW Enhanced Avalanche Ruggedness417 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectification

 9.1. Size:1003K  cn hunteck
 hgb017n10s.pdf pdf_icon

HGB012N08A

HGB017N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability1.4RDS(on),typ mW Enhanced Avalanche Ruggedness354 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested240 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectification in SMPS Hard Switching and High S

 9.2. Size:863K  cn hunteck
 hgb016n06s hgk018n06s hgp019n06s.pdf pdf_icon

HGB012N08A

HGB016N06S , HGK018N06S P-1HGP019N06S60V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-263 1.45RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.55RDS(on),typ m Enhanced Avalanche RuggednessTO-220 1.67RDS(on),typ m 100% UIS Tested, 100% Rg Tested340 AID (Sillicon Limited) Lead Free120 AID (Package Limited)

MOSTRAR MÁS

Otros transistores... HGA190N15S , HGA190N15SL , HGA195N15S , HGA1K2N20ML , HGA1K2N25ML , HGA2K4N25ML , HGA320N20S , HGB009NE6A , 7N60 , HGB012NE6A , HGK012NE6A , HGB014N08A , HGK014N08A , HGB016N06S , HGK018N06S , HGP019N06S , HGB016NE6A .

History: HTD1K5N10 | QM3014M6 | RJK03F8DNS | BL7N60A-D

 

 
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