HGB014N08A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HGB014N08A
   Código: GB014N08A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 429 W
   Voltaje máximo drenador - fuente |Vds|: 80 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 180 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 318 nC
   Tiempo de subida (tr): 32 nS
   Conductancia de drenaje-sustrato (Cd): 2871 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0016 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET HGB014N08A

HGB014N08A Datasheet (PDF)

..1. Size:1000K cn hunteck
hgb014n08a hgk014n08a.pdf

, P-1HGB014N08A HGK014N08A80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 1.1RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.3RDS(on),typ mW Enhanced Avalanche Ruggedness371 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectificatio

9.1. Size:1003K cn hunteck
hgb017n10s.pdf

HGB017N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability1.4RDS(on),typ mW Enhanced Avalanche Ruggedness354 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested240 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectification in SMPS Hard Switching and High S

9.2. Size:863K cn hunteck
hgb016n06s hgk018n06s hgp019n06s.pdf

HGB016N06S , HGK018N06S P-1HGP019N06S60V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-263 1.45RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.55RDS(on),typ m Enhanced Avalanche RuggednessTO-220 1.67RDS(on),typ m 100% UIS Tested, 100% Rg Tested340 AID (Sillicon Limited) Lead Free120 AID (Package Limited)

9.3. Size:1002K cn hunteck
hgb012n08a.pdf

P-1HGB012N08A80V N-Ch Power MOSFETFeature High Speed Power Smooth Switching80 VVDS Enhanced Body diode dv/dt capability0.9RDS(on),typ mW Enhanced Avalanche Ruggedness428 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested240 AID (Package Limited) Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Cir

9.4. Size:997K cn hunteck
hgb016ne6a.pdf

HGB016NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability1.35RDS(on),typ mW Enhanced Avalanche Ruggedness363 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and

9.5. Size:1004K cn hunteck
hgb012ne6a hgk012ne6a.pdf

, P-1HGB012NE6A HGK012NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Smooth SwitchingTO-263 1RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.2RDS(on),typ mW Enhanced Avalanche Ruggedness417 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectification

9.6. Size:1282K cn hunteck
hgb019ne6a hgk019ne6a hgp019ne6a.pdf

HGB019NE6A HGP019NE6A, P-1HGK019NE6A65V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching TO-263 1.35RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.55RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.65RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 363 A Lead Free, Halogen Free ID (Sillicon Limited)180 A ID (Pack

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCEP060N10D

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