HGB019NE6A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGB019NE6A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 333 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28 nS
Cossⓘ - Capacitancia de salida: 3042 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de HGB019NE6A MOSFET
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HGB019NE6A datasheet
hgb019ne6a hgk019ne6a hgp019ne6a.pdf
HGB019NE6A HGP019NE6A , P-1 HGK019NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 1.35 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.55 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.65 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 363 A Lead Free, Halogen Free ID (Sillicon Limited) 180 A ID (Pack
hgb017n10s.pdf
HGB017N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 1.4 RDS(on),typ mW Enhanced Avalanche Ruggedness 354 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 240 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High S
hgb016n06s hgk018n06s hgp019n06s.pdf
HGB016N06S , HGK018N06S P-1 HGP019N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.45 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.55 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.67 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 340 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited)
hgb012n08a.pdf
P-1 HGB012N08A 80V N-Ch Power MOSFET Feature High Speed Power Smooth Switching 80 V VDS Enhanced Body diode dv/dt capability 0.9 RDS(on),typ mW Enhanced Avalanche Ruggedness 428 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 240 A ID (Package Limited) Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Cir
Otros transistores... HGK012NE6A, HGB014N08A, HGK014N08A, HGB016N06S, HGK018N06S, HGP019N06S, HGB016NE6A, HGB017N10S, 75N75, HGK019NE6A, HGP019NE6A, HGB020N10S, HGK020N10S, HGP020N10S, HGB020NE4S, HGK020NE4S, HGP020NE4S
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