HGP024N08S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGP024N08S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 1260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm

Encapsulados: TO-220

 Búsqueda de reemplazo de HGP024N08S MOSFET

- Selecciónⓘ de transistores por parámetros

 

HGP024N08S datasheet

 ..1. Size:861K  cn hunteck
hgb021n08s hgk023n08s hgp024n08s.pdf pdf_icon

HGP024N08S

, HGB021N08S HGK023N08S P-1 HGP024N08S 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.92 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 2.00 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 290 A ID (Sillicon Limited) Lead Free 205 A ID (Package Limited)

 9.1. Size:812K  cn hunteck
hgb029n06sl hgp029n06sl.pdf pdf_icon

HGP024N08S

HGB029N06SL HGP029N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 1.8 RDS(on),typ TO-263 VGS=10V m Optimized for high speed switching, Logic Level VGS=4.5V 2.7 RDS(on),typ m Enhanced Body diode dv/dt capability 2.1 RDS(on),typ TO-220 VGS=10V m Enhanced Avalanche Ruggedness VGS=4.5V 3.0 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 198 A ID (Si

 9.2. Size:1129K  cn hunteck
hgb020ne4s hgk020ne4s hgp020ne4s.pdf pdf_icon

HGP024N08S

, P-1 HGB020NE4S HGK020NE4S HGP020NE4S 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.75 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.75 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 288 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Appli

 9.3. Size:976K  cn hunteck
hgb028n08a hgp028n08a.pdf pdf_icon

HGP024N08S

HGB028N08A , HGP028N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 2.6 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.9 RDS(on),typ mW Enhanced Avalanche Ruggedness 182 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectif

Otros transistores... HGP020N10S, HGB020NE4S, HGK020NE4S, HGP020NE4S, HGB021N08A, HGP021N08A, HGB021N08S, HGK023N08S, K2611, HGB023NE6A, HGP023NE6A, HGB025N06S, HGK025N06S, HGP025N06S, HGB025N10A, HGB025N12S, HGB027N10A