HGP023NE6A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGP023NE6A
Código: GP023NE6A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 200 W
Voltaje máximo drenador - fuente |Vds|: 65 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 92 nC
Tiempo de subida (tr): 13 nS
Conductancia de drenaje-sustrato (Cd): 1849 pF
Resistencia entre drenaje y fuente RDS(on): 0.0027 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET HGP023NE6A
HGP023NE6A Datasheet (PDF)
hgb023ne6a hgp023ne6a.pdf
,HGB023NE6A HGP023NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power SwitchingTO-263 2.2RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2.5RDS(on),typ mW Enhanced Avalanche Ruggedness190 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Recti
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,HGB021N08S HGK023N08S P-1HGP024N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.92RDS(on),typ m Enhanced Avalanche RuggednessTO-220 2.00RDS(on),typ m 100% UIS Tested, 100% Rg Tested290 AID (Sillicon Limited) Lead Free205 AID (Package Limited)
hgb029n06sl hgp029n06sl.pdf
HGB029N06SL HGP029N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature1.8RDS(on),typ TO-263 VGS=10V m Optimized for high speed switching, Logic LevelVGS=4.5V2.7RDS(on),typ m Enhanced Body diode dv/dt capability2.1RDS(on),typ TO-220 VGS=10V m Enhanced Avalanche RuggednessVGS=4.5V3.0RDS(on),typ m 100% UIS Tested, 100% Rg Tested198 AID (Si
hgb020ne4s hgk020ne4s hgp020ne4s.pdf
, P-1HGB020NE4S HGK020NE4SHGP020NE4S45V N-Ch Power MOSFETFeature45 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.75RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 1.75RDS(on),typ mW 100% UIS Tested, 100% Rg Tested288 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Appli
hgb028n08a hgp028n08a.pdf
HGB028N08A , HGP028N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 2.6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2.9RDS(on),typ mW Enhanced Avalanche Ruggedness182 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectif
hgb021n08a hgp021n08a.pdf
HGB021N08A , HGP021N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 1.7RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2RDS(on),typ mW Enhanced Avalanche Ruggedness285 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectific
hgb025n06s hgk025n06s hgp025n06s.pdf
,HGB025N06S HGK025N06S P-1HGP025N06S60V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-263 1.6RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.8RDS(on),typ m Enhanced Avalanche RuggednessTO-220 1.9RDS(on),typ m 100% UIS Tested, 100% Rg Tested230 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap
hgb029ne4sl hgp029ne4sl.pdf
HGB029NE4SL HGP029NE4SL P-1,45V N-Ch Power MOSFET45 VVDSFeature2.2RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level2.9RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability2.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness3.2RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested182 AID (Sillicon Limited)
hgb027n10a hgk027n10a hgp027n10a.pdf
HGB027N10A , P-1HGK027N10AHGP027N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 VGS=10V 2.2 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-247 VGS=10V 2.4 mW Enhanced Avalanche RuggednessRDS(on),typ TO-220 VGS=10V 2.5 mW 100% UIS Tested, 100% Rg Tested248 AID (Sillicon Limited) Lead Free, Halogen Free
hgb020n10s hgk020n10s hgp020n10s.pdf
, P-1HGB020N10S HGK020N10SHGP020N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 1.6 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-247 1.8 mW Enhanced Avalanche RuggednessRDS(on),typ TO-220 1.9 mW 100% UIS Tested, 100% Rg Tested327 AID (Sillicon Limited) Lead Free, Halogen Free180 AID (Package Limit
hgb028ne6a hgp028ne6a.pdf
HGB028NE6A , HGP028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power SwitchingTO-263 2.3RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2.6RDS(on),typ mW Enhanced Avalanche Ruggedness181 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain H
hgb027n12s hgp027n12s.pdf
, P-1HGB027N12S HGP027N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263 2RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2.3RDS(on),typ mW Enhanced Avalanche Ruggedness269 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectificatio
hgp028ne6al.pdf
HGP028NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic Level2.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness174 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching a
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