HGB025N10A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGB025N10A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 341 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 114 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm

Encapsulados: TO-263-7

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HGB025N10A datasheet

 ..1. Size:999K  cn hunteck
hgb025n10a.pdf pdf_icon

HGB025N10A

HGB025N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 2.0 RDS(on),typ mW Enhanced Body diode dv/dt capability 258 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain DC/D

 6.1. Size:1004K  cn hunteck
hgb025n12s.pdf pdf_icon

HGB025N10A

P-1 HGB025N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263-7 1.9 RDS(on),typ mW Enhanced Body diode dv/dt capability 285 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 240 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and Hig

 7.1. Size:870K  cn hunteck
hgb025n06s hgk025n06s hgp025n06s.pdf pdf_icon

HGB025N10A

, HGB025N06S HGK025N06S P-1 HGP025N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.6 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.8 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.9 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 230 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap

 9.1. Size:861K  cn hunteck
hgb021n08s hgk023n08s hgp024n08s.pdf pdf_icon

HGB025N10A

, HGB021N08S HGK023N08S P-1 HGP024N08S 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.92 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 2.00 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 290 A ID (Sillicon Limited) Lead Free 205 A ID (Package Limited)

Otros transistores... HGB021N08S, HGK023N08S, HGP024N08S, HGB023NE6A, HGP023NE6A, HGB025N06S, HGK025N06S, HGP025N06S, 60N06, HGB025N12S, HGB027N10A, HGK027N10A, HGP027N10A, HGB027N10S, HGK029N10S, HGP030N10S, HGB027N12S