HGB025N12S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGB025N12S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 429 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 240 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 30 nS
Cossⓘ - Capacitancia de salida: 1332 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
Encapsulados: TO-263-7
Búsqueda de reemplazo de HGB025N12S MOSFET
- Selecciónⓘ de transistores por parámetros
HGB025N12S datasheet
..1. Size:1004K cn hunteck
hgb025n12s.pdf 
P-1 HGB025N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263-7 1.9 RDS(on),typ mW Enhanced Body diode dv/dt capability 285 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 240 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and Hig
6.1. Size:999K cn hunteck
hgb025n10a.pdf
HGB025N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 2.0 RDS(on),typ mW Enhanced Body diode dv/dt capability 258 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain DC/D
7.1. Size:870K cn hunteck
hgb025n06s hgk025n06s hgp025n06s.pdf
, HGB025N06S HGK025N06S P-1 HGP025N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.6 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.8 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.9 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 230 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap
9.1. Size:861K cn hunteck
hgb021n08s hgk023n08s hgp024n08s.pdf
, HGB021N08S HGK023N08S P-1 HGP024N08S 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.92 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 2.00 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 290 A ID (Sillicon Limited) Lead Free 205 A ID (Package Limited)
9.2. Size:812K cn hunteck
hgb029n06sl hgp029n06sl.pdf
HGB029N06SL HGP029N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 1.8 RDS(on),typ TO-263 VGS=10V m Optimized for high speed switching, Logic Level VGS=4.5V 2.7 RDS(on),typ m Enhanced Body diode dv/dt capability 2.1 RDS(on),typ TO-220 VGS=10V m Enhanced Avalanche Ruggedness VGS=4.5V 3.0 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 198 A ID (Si
9.3. Size:1129K cn hunteck
hgb020ne4s hgk020ne4s hgp020ne4s.pdf
, P-1 HGB020NE4S HGK020NE4S HGP020NE4S 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.75 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.75 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 288 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Appli
9.4. Size:976K cn hunteck
hgb028n08a hgp028n08a.pdf
HGB028N08A , HGP028N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 2.6 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.9 RDS(on),typ mW Enhanced Avalanche Ruggedness 182 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectif
9.5. Size:971K cn hunteck
hgb021n08a hgp021n08a.pdf
HGB021N08A , HGP021N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 1.7 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2 RDS(on),typ mW Enhanced Avalanche Ruggedness 285 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectific
9.6. Size:823K cn hunteck
hgb029ne4sl hgp029ne4sl.pdf
HGB029NE4SL HGP029NE4SL P-1 , 45V N-Ch Power MOSFET 45 V VDS Feature 2.2 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 2.9 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 2.5 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 3.2 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested 182 A ID (Sillicon Limited)
9.7. Size:1042K cn hunteck
hgb027n10a hgk027n10a hgp027n10a.pdf
HGB027N10A , P-1 HGK027N10A HGP027N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 VGS=10V 2.2 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-247 VGS=10V 2.4 mW Enhanced Avalanche Ruggedness RDS(on),typ TO-220 VGS=10V 2.5 mW 100% UIS Tested, 100% Rg Tested 248 A ID (Sillicon Limited) Lead Free, Halogen Free
9.8. Size:972K cn hunteck
hgb023ne6a hgp023ne6a.pdf
, HGB023NE6A HGP023NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 2.2 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.5 RDS(on),typ mW Enhanced Avalanche Ruggedness 190 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Recti
9.9. Size:1055K cn hunteck
hgb020n10s hgk020n10s hgp020n10s.pdf
, P-1 HGB020N10S HGK020N10S HGP020N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 1.6 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-247 1.8 mW Enhanced Avalanche Ruggedness RDS(on),typ TO-220 1.9 mW 100% UIS Tested, 100% Rg Tested 327 A ID (Sillicon Limited) Lead Free, Halogen Free 180 A ID (Package Limit
9.10. Size:958K cn hunteck
hgb028ne6a hgp028ne6a.pdf
HGB028NE6A , HGP028NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 2.3 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 181 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain H
9.11. Size:976K cn hunteck
hgb027n10s hgk029n10s hgp030n10s.pdf
, P-1 HGB027N10S HGK029N10S HGP030N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.25 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 2.42 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 2.50 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 260 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) App
9.12. Size:979K cn hunteck
hgb027n12s hgp027n12s.pdf
, P-1 HGB027N12S HGP027N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 2 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 269 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free Application Synchronous Rectificatio
Otros transistores... HGK023N08S, HGP024N08S, HGB023NE6A, HGP023NE6A, HGB025N06S, HGK025N06S, HGP025N06S, HGB025N10A, IRFP064N, HGB027N10A, HGK027N10A, HGP027N10A, HGB027N10S, HGK029N10S, HGP030N10S, HGB027N12S, HGP027N12S
