FDS8858CZ Todos los transistores

 ..1. Size:423K  fairchild semi
 fds8858cz.pdf

May 2009 FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel 30V, 8.6A, 17.0m P-Channel -30V, -7.3A, 20.5m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 17m at VGS = 10V, ID = 8.6A advanced PowerTrench process that has been especially Max rDS(on)

 9.1. Size:280K  fairchild semi
 fds8882.pdf

December 2008 FDS8882 N-Channel PowerTrench MOSFET 30 V, 9 A, 20.0 m Features General Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 9 A The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8 A package technologies have been combined to offer the lowest rDS(o

 9.2. Size:305K  fairchild semi
 fds8884.pdf

February 2006 FDS8884 N-Channel PowerTrench MOSFET 30V, 8.5A, 23m General Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5A either synchronous or conventional switching PWM controllers. It has been opt

 9.3. Size:446K  fairchild semi
 fds8812nz.pdf

November 2008 FDS8812NZ N-Channel PowerTrench MOSFET 30V, 20A, 4.0m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.0m at VGS = 10V, ID = 20A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 4.9m at VGS = 4.5V, ID =18A been especially tailored to minimize the on-state resistance. HBM ESD protection

 9.4. Size:638K  fairchild semi
 fds8896.pdf

April 2007 tm FDS8896 N-Channel PowerTrench MOSFET 30V, 15A, 6.0m Features General Description rDS(on) = 6.0m , VGS = 10V, ID = 15A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.3m , VGS = 4.5V, ID = 14A either synchronous or conventional switching PWM controllers. It has been optimized for l

 9.5. Size:622K  fairchild semi
 fds8876.pdf

April 2007 tm FDS8876 N-Channel PowerTrench MOSFET 30V, 12.5A, 8.2m Features General Description rDS(on) = 8.2m , VGS = 10V, ID = 12.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 10.2m , VGS = 4.5V, ID = 11.4A either synchronous or conventional switching PWM controllers. It has been optimize

 9.6. Size:306K  fairchild semi
 fds8817nz.pdf

November 2008 FDS8817NZ N-Channel PowerTrench MOSFET 30V, 15A, 7.0m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7m at VGS = 10V, ID = 15A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 10m at VGS = 4.5V, ID =12.6A been especially tailored to minimize the on-state resistance. HBM ESD protection leve

 9.7. Size:684K  fairchild semi
 fds8870.pdf

April 2007 tm FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2m Features General Description rDS(on) = 4.2m , VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 4.9m , VGS = 4.5V, ID = 17A either synchronous or conventional switching PWM controllers. It has been optimized for l

 9.8. Size:620K  fairchild semi
 fds8880.pdf

April 2007 tm FDS8880 N-Channel PowerTrench MOSFET 30V, 11.6A, 10m Features General Description rDS(on) = 10m , VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m , VGS = 4.5V, ID = 10.7A either synchronous or conventional switching PWM controllers. It has been optimized fo

 9.9. Size:285K  fairchild semi
 fds8840nz.pdf

April 2009 FDS8840NZ N-Channel PowerTrench MOSFET 40 V, 18.6 A, 4.5 m Features General Description Max rDS(on) = 4.5 m at VGS = 10 V, ID = 18.6 A The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 14.9 A package technologies have been combined to offer the lowest

 9.10. Size:335K  fairchild semi
 fds8813nz.pdf

November 2008 FDS8813NZ N-Channel PowerTrench MOSFET 30V, 18.5A, 4.5m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.5m at VGS = 10V, ID = 18.5A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 6.0m at VGS = 4.5V, ID =16A been especially tailored to minimize the on-state resistance. HBM ESD protect

 9.11. Size:304K  fairchild semi
 fds8842nz.pdf

February 2009 FDS8842NZ N-Channel PowerTrench MOSFET 40 V, 14.9 A, 7.0 m Features General Description Max rDS(on) = 7.0 m at VGS = 10 V, ID = 14.9 A The FDS8842NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 11.6 m at VGS = 4.5 V, ID = 11.6 A package technologies have been combined to offer the lowe

 9.12. Size:652K  fairchild semi
 fds8878.pdf

December 2008 FDS8878 N-Channel PowerTrench MOSFET 30V, 10.2A, 14m Features General Description rDS(on) = 14m , VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 17m , VGS = 4.5V, ID = 9.3A either synchronous or conventional switching PWM controllers. It has been optimized for

 9.13. Size:625K  fairchild semi
 fds8874.pdf

April 2007 tm FDS8874 N-Channel PowerTrench MOSFET 30V, 16A, 5.5m Features General Description rDS(on) = 5.5m , VGS = 10V, ID = 16A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.0m , VGS = 4.5V, ID = 15A either synchronous or conventional switching PWM controllers. It has been optimized for l

 9.14. Size:317K  onsemi
 fds8884.pdf

February 2006 FDS8884 N-Channel PowerTrench MOSFET 30V, 8.5A, 23m General Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5A either synchronous or conventional switching PWM controllers. It has been opt

 9.15. Size:586K  onsemi
 fds8896.pdf

FDS8896 N-Channel PowerTrench MOSFET 30V, 15A, 6.0m Features General Description rDS(on) = 6.0m , VGS = 10V, ID = 15A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.3m , VGS = 4.5V, ID = 14A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, l

 9.16. Size:378K  onsemi
 fds8817nz.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.17. Size:477K  onsemi
 fds8870.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.18. Size:564K  onsemi
 fds8880.pdf

FDS8880 N-Channel PowerTrench MOSFET 30V, 11.6A, 10m Features General Description rDS(on) = 10m , VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m , VGS = 4.5V, ID = 10.7A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge

 9.19. Size:1434K  cn vbsemi
 fds8812nz.pdf

FDS8812NZ www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch