HGP037N10S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGP037N10S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 56 nS

Cossⓘ - Capacitancia de salida: 580 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm

Encapsulados: TO-220

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HGP037N10S datasheet

 ..1. Size:918K  cn hunteck
hgb037n10s hgk037n10s hgp037n10s.pdf pdf_icon

HGP037N10S

HGB037N10S HGK037N10S P-1 , HGP037N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.8 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 3 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 3.1 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 190 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap

 5.1. Size:1604K  cn hunteck
hgb037n10t hgp037n10t hga037n10t.pdf pdf_icon

HGP037N10S

HGB037N10T HGP037N10T P-1 , HGA037N10T 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Smooth Switching 3.7 RDS(on),max mW Enhanced Body diode dv/dt capability 168 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools

 9.1. Size:968K  cn hunteck
hgb035n08a hgp035n08a.pdf pdf_icon

HGP037N10S

HGB035N08A , HGP035N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 3 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 3.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 161 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hig

 9.2. Size:925K  cn hunteck
hgb039n12s hgk039n12s hgp039n12s.pdf pdf_icon

HGP037N10S

, HGB039N12S HGK039N12S P-1 HGP039N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching 3.6 RDS(on),TYP m Enhanced Body diode dv/dt capability 197 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 180 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard

Otros transistores... HGP029NE4SL, HGB035N08A, HGP035N08A, HGB035N10A, HGK035N10A, HGP035N10A, HGB037N10S, HGK037N10S, IRFB4115, HGB037N10T, HGP037N10T, HGA037N10T, HGB037N15M, HGB039N08A, HGP039N08A, HGB039N08S, HGK039N08S