HGB039N15M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGB039N15M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 429 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 729 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm

Encapsulados: TO-263

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HGB039N15M datasheet

 ..1. Size:973K  cn hunteck
 hgb039n15m hgp039n15m.pdf pdf_icon

HGB039N15M

, P-1 HGB039N15M HGP039N15M 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 3.2 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 3.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 206 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free Application Synchronous Rectificat

 6.1. Size:925K  cn hunteck
 hgb039n12s hgk039n12s hgp039n12s.pdf pdf_icon

HGB039N15M

, HGB039N12S HGK039N12S P-1 HGP039N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching 3.6 RDS(on),TYP m Enhanced Body diode dv/dt capability 197 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 180 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard

 7.1. Size:807K  cn hunteck
 hgb039n08a hgp039n08a.pdf pdf_icon

HGB039N15M

, HGB039N08A HGP039N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Smooth Switching TO-263 2.9 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 3.2 RDS(on),typ m Enhanced Avalanche Ruggedness 196 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free Application Synchronous Rectific

 7.2. Size:851K  cn hunteck
 hgb039n08s hgk039n08s hgp039n08s.pdf pdf_icon

HGB039N15M

, HGB039N08S HGK039N08S P-1 HGP039N08S 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Smooth Switching TO-263 2.9 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 3.1 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 3.2 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 187 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limit

MOSTRAR MÁS

Otros transistores... HGB039N08A, HGP039N08A, HGB039N08S, HGK039N08S, HGP039N08S, HGB039N12S, HGK039N12S, HGP039N12S, IRF4905, HGP039N15M, HGB040N06S, HGP040N06S, HGB040N06SL, HGP040N06SL, HGB041N15S, HGB042N10A, HGP042N10A