HGB039N15M Todos los transistores

 

HGB039N15M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGB039N15M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 429 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 729 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: TO-263
 

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HGB039N15M Datasheet (PDF)

 ..1. Size:973K  cn hunteck
 hgb039n15m hgp039n15m.pdf pdf_icon

HGB039N15M

, P-1HGB039N15M HGP039N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.2RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.6RDS(on),typ mW Enhanced Avalanche Ruggedness206 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectificat

 6.1. Size:925K  cn hunteck
 hgb039n12s hgk039n12s hgp039n12s.pdf pdf_icon

HGB039N15M

,HGB039N12S HGK039N12S P-1HGP039N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching3.6RDS(on),TYP m Enhanced Body diode dv/dt capability197 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard

 7.1. Size:807K  cn hunteck
 hgb039n08a hgp039n08a.pdf pdf_icon

HGB039N15M

,HGB039N08A HGP039N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 2.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 3.2RDS(on),typ m Enhanced Avalanche Ruggedness196 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectific

 7.2. Size:851K  cn hunteck
 hgb039n08s hgk039n08s hgp039n08s.pdf pdf_icon

HGB039N15M

,HGB039N08S HGK039N08S P-1HGP039N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 2.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3.1RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.2RDS(on),typ m 100% UIS Tested, 100% Rg Tested187 AID (Sillicon Limited) Lead Free120 AID (Package Limit

MOSTRAR MÁS

Otros transistores... HGB039N08A , HGP039N08A , HGB039N08S , HGK039N08S , HGP039N08S , HGB039N12S , HGK039N12S , HGP039N12S , IRF4905 , HGP039N15M , HGB040N06S , HGP040N06S , HGB040N06SL , HGP040N06SL , HGB041N15S , HGB042N10A , HGP042N10A .

History: AM90P15-30P | TDM3307A | PSMN165-200K | TK4P55DA | UF640G-TF3-T | TK4A65DA | TDM3428B

 

 
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