HGP040N06S Todos los transistores

 

HGP040N06S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGP040N06S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 176 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 984 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm
   Paquete / Cubierta: TO-220
 

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HGP040N06S Datasheet (PDF)

 ..1. Size:810K  cn hunteck
hgb040n06s hgp040n06s.pdf pdf_icon

HGP040N06S

HGB040N06S HGP040N06S P-1,60V N-Ch Power MOSFET60 VVDSFeatureTO-263 3.1RDS(on),typ m Optimized for high speed switchingTO-220 3.4RDS(on),typ m Enhanced Body diode dv/dt capability156 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synch

 0.1. Size:822K  cn hunteck
hgb040n06sl hgp040n06sl.pdf pdf_icon

HGP040N06S

HGB040N06SL HGP040N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature2.9RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.1RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability3.2RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness4.4RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested140 AID (Sillicon Limited)

 9.1. Size:1049K  cn hunteck
hgb043n15s hgk043n15s hgp043n15s.pdf pdf_icon

HGP040N06S

, P-1HGB043N15S HGK043N15SHGP043N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.2RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.3RDS(on),typ mW 100% UIS Tested, 100% Rg Tested206 AID (Sillicon Limited) Lead FreeApplication Synchronous

 9.2. Size:919K  cn hunteck
hgb046ne6a hgp046ne6a.pdf pdf_icon

HGP040N06S

, P-1HGB046NE6A HGP046NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 4.2RDS(on),typ mW Enhanced Avalanche Ruggedness108 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

Otros transistores... HGK039N08S , HGP039N08S , HGB039N12S , HGK039N12S , HGP039N12S , HGB039N15M , HGP039N15M , HGB040N06S , SPP20N60C3 , HGB040N06SL , HGP040N06SL , HGB041N15S , HGB042N10A , HGP042N10A , HGB042N10S , HGP042N10S , HGB043N15S .

History: RJK4532DPD | IXTY1N80 | AM6411P | IRF7484Q | BSC072N04LD | AP2864I-A-HF | SM3106NSU

 

 
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