HGB040N06SL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGB040N06SL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 176 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 1270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm

Encapsulados: TO-263

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HGB040N06SL datasheet

 ..1. Size:822K  cn hunteck
hgb040n06sl hgp040n06sl.pdf pdf_icon

HGB040N06SL

HGB040N06SL HGP040N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 2.9 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.1 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 3.2 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 4.4 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested 140 A ID (Sillicon Limited)

 4.1. Size:810K  cn hunteck
hgb040n06s hgp040n06s.pdf pdf_icon

HGB040N06SL

HGB040N06S HGP040N06S P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature TO-263 3.1 RDS(on),typ m Optimized for high speed switching TO-220 3.4 RDS(on),typ m Enhanced Body diode dv/dt capability 156 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synch

 9.1. Size:1049K  cn hunteck
hgb043n15s hgk043n15s hgp043n15s.pdf pdf_icon

HGB040N06SL

, P-1 HGB043N15S HGK043N15S HGP043N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 4.3 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 206 A ID (Sillicon Limited) Lead Free Application Synchronous

 9.2. Size:919K  cn hunteck
hgb046ne6a hgp046ne6a.pdf pdf_icon

HGB040N06SL

, P-1 HGB046NE6A HGP046NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 108 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain

Otros transistores... HGP039N08S, HGB039N12S, HGK039N12S, HGP039N12S, HGB039N15M, HGP039N15M, HGB040N06S, HGP040N06S, IRFP260, HGP040N06SL, HGB041N15S, HGB042N10A, HGP042N10A, HGB042N10S, HGP042N10S, HGB043N15S, HGK043N15S