HGP058N08SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HGP058N08SL
   Código: GP058N08SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 176 W
   Voltaje máximo drenador - fuente |Vds|: 80 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 120 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
   Carga de la puerta (Qg): 46 nC
   Tiempo de subida (tr): 7 nS
   Conductancia de drenaje-sustrato (Cd): 385 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0055 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET HGP058N08SL

HGP058N08SL Datasheet (PDF)

..1. Size:810K cn hunteck
hgb058n08sl hgp058n08sl.pdf

HGB058N08SL, HGP058N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching,Logic Level4.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness4.3RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested5.9RDS(on),typ VGS=4.5V m Lead Free130 AID (Sillicon Limit

9.1. Size:919K cn hunteck
hgb059n08a hgp059n08a.pdf

, P-1HGB059N08AHGP059N08A80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 4.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 5.2RDS(on),typ mW Enhanced Avalanche Ruggedness97 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

9.2. Size:849K cn hunteck
hgb059n12s hgp059n12s.pdf

,HGB059N12S HGP059N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263 4.4RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 4.7RDS(on),typ m Enhanced Avalanche Ruggedness160 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synchronous Rectif

9.3. Size:1121K cn hunteck
hgb057n15s hgk057n15s hgp057n15s.pdf

,HGB057N15S HGK057N15S P-1HGP057N15S150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Smooth Switching TO-263 5.3RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-247 5.4RDS(on),TYP mW Enhanced Avalanche Ruggedness TO-220 5.5RDS(on),TYP mW 100% UIS Tested, 100% Rg Tested 161 A Lead Free ID (Sillicon Limited)Application Synchr

9.4. Size:985K cn hunteck
hgp050n10al.pdf

HGP050N10ALP-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 4.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 125 AID 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and

9.5. Size:975K cn hunteck
hgb050n10a hgp050n10a.pdf

, P-1HGB050N10A HGP050N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 4.5RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 4.8RDS(on),typ mW Enhanced Avalanche Ruggedness125 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-220TO-263 Hard Switching and Hig

9.6. Size:851K cn hunteck
hgb059n12sl hgp059n12sl.pdf

,HGB059N12SL HGP059N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching, Logic LevelTO-263 4.7RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 5.3RDS(on),typ m Enhanced Avalanche Ruggedness160 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Syn

9.7. Size:978K cn hunteck
hgb055n12s hgp055n12s.pdf

, P-1HGB055N12S HGP055N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263 4.8RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 5.1RDS(on),typ mW Enhanced Avalanche Ruggedness146 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchi

9.8. Size:820K cn hunteck
hgb053n06sl hgp053n06sl.pdf

HGB053N06SL , HGP053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level3.9RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.3RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness4.1RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested5.6RDS(on),typ VGS=4.5V m Lead Free, Halogen Free105 AID

9.9. Size:851K cn hunteck
hgb050n14s hgp050n14s.pdf

,HGB050N14S HGP050N14S P-1135V N-Ch Power MOSFETFeature135 VVDS High Speed Power Smooth Switching4.5RDS(on),TYP m Enhanced Body diode dv/dt capability175 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching a

9.10. Size:926K cn hunteck
hgb053n06s hgp053n06s.pdf

, P-1HGB053N06S HGP053N06S60V N-Ch Power MOSFET60 VVDSFeatureTO-263 4.3RDS(on),typ mW Optimized for high speed switchingTO-220 4.6RDS(on),typ mW Enhanced Body diode dv/dt capability112 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchrono

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