HGB059N08A Todos los transistores

 

HGB059N08A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGB059N08A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 107 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 97 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 502 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm
   Paquete / Cubierta: TO-263
 

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HGB059N08A Datasheet (PDF)

 ..1. Size:919K  cn hunteck
 hgb059n08a hgp059n08a.pdf pdf_icon

HGB059N08A

, P-1HGB059N08AHGP059N08A80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 4.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 5.2RDS(on),typ mW Enhanced Avalanche Ruggedness97 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 7.1. Size:849K  cn hunteck
 hgb059n12s hgp059n12s.pdf pdf_icon

HGB059N08A

,HGB059N12S HGP059N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263 4.4RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 4.7RDS(on),typ m Enhanced Avalanche Ruggedness160 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synchronous Rectif

 7.2. Size:851K  cn hunteck
 hgb059n12sl hgp059n12sl.pdf pdf_icon

HGB059N08A

,HGB059N12SL HGP059N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching, Logic LevelTO-263 4.7RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 5.3RDS(on),typ m Enhanced Avalanche Ruggedness160 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Syn

 9.1. Size:1121K  cn hunteck
 hgb057n15s hgk057n15s hgp057n15s.pdf pdf_icon

HGB059N08A

,HGB057N15S HGK057N15S P-1HGP057N15S150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Smooth Switching TO-263 5.3RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-247 5.4RDS(on),TYP mW Enhanced Avalanche Ruggedness TO-220 5.5RDS(on),TYP mW 100% UIS Tested, 100% Rg Tested 161 A Lead Free ID (Sillicon Limited)Application Synchr

MOSTRAR MÁS

Otros transistores... HGP053N06SL , HGB055N12S , HGP055N12S , HGB057N15S , HGK057N15S , HGP057N15S , HGB058N08SL , HGP058N08SL , IRF830 , HGP059N08A , HGB059N12S , HGP059N12S , HGB059N12SL , HGP059N12SL , HGB068N15S , HGP068N15S , HGB070N12S .

History: CEU6426 | IRF3711ZSPBF | IXTH200N085T | SSM3K16FS | AO4828 | ME4920 | RQK0302GGDQS

 

 
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