HGB059N12SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGB059N12SL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 333 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 441 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0069 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET HGB059N12SL
HGB059N12SL Datasheet (PDF)
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, P-1HGB053N06S HGP053N06S60V N-Ch Power MOSFET60 VVDSFeatureTO-263 4.3RDS(on),typ mW Optimized for high speed switchingTO-220 4.6RDS(on),typ mW Enhanced Body diode dv/dt capability112 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchrono
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