HGP088N15S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGP088N15S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 273 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 113 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 333 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de HGP088N15S MOSFET
HGP088N15S Datasheet (PDF)
hgb088n15s hgp088n15s.pdf

HGB088N15S HGP088N15S, P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 7.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 113 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching a
hgp080n10s.pdf

HGP080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability7.1RDS(on),typ mW Enhanced Avalanche Ruggedness82 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms
hgb080n10al hgp080n10al.pdf

HGB080N10AL , HGP080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness7.1RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested9.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free85 AID (Sillico
hgb080n08sl hgp080n08sl.pdf

HGB080N08SL , HGP080N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level6.0RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V8.4RDS(on),typ m Enhanced Avalanche Ruggedness6.3RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V8.7RDS(on),typ m Lead Free, Halogen
Otros transistores... HGP080N08SL , HGB080N10A , HGP080N10A , HGB080N10AL , HGP080N10AL , HGB082N10M , HGP082N10M , HGB088N15S , AO4468 , HGB090N06SL , HGP090N06SL , HGB095NE4SL , HGP095NE4SL , HGB098N10A , HGP098N10A , HGB098N10AL , HGP098N10AL .
History: HM80N03K | 2N7002M3T5G | TPCA8028-H | FMV20N50E | AP4409AGEH-HF | BSC016N04LSG
History: HM80N03K | 2N7002M3T5G | TPCA8028-H | FMV20N50E | AP4409AGEH-HF | BSC016N04LSG



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