HGD059N08AL Todos los transistores

 

HGD059N08AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGD059N08AL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 88 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 540 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm
   Paquete / Cubierta: TO-252
 

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HGD059N08AL Datasheet (PDF)

 ..1. Size:964K  cn hunteck
 hgd059n08al hgi059n08al.pdf pdf_icon

HGD059N08AL

, P-1HGD059N08ALHGI059N08AL80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness88 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification i

 4.1. Size:959K  cn hunteck
 hgd059n08a hgi059n08a.pdf pdf_icon

HGD059N08AL

, P-1HGD059N08AHGI059N08A80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching4.9RDS(on),typ mW Enhanced Body diode dv/dt capability89 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circu

 9.1. Size:908K  cn hunteck
 hgd053n06sl hgi053n06sl.pdf pdf_icon

HGD059N08AL

HGD053N06SL , HGI053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.1RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness105 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication

 9.2. Size:830K  cn hunteck
 hgd058n08sl.pdf pdf_icon

HGD059N08AL

HGD058N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching,Logic Level4.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.9RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness110 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead FreeApplication Synchronous Rectification

MOSTRAR MÁS

Otros transistores... HGD046NE6AL , HGD050N10A , HGD053N06S , HGD053N06SL , HGI053N06SL , HGD058N08SL , HGD059N08A , HGI059N08A , K2611 , HGI059N08AL , HGD077N10SL , HGI077N10SL , HGD080N10A , HGI080N10A , HGD080N10AL , HGI080N10AL , HGD090NE6A .

History: 2SK2140 | SIHF840L | GP2M009A090NG | DH033N03B | CS1010 | FHP10N60A | NVB5860NL

 

 
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