HGD093N12SL Todos los transistores

 

HGD093N12SL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGD093N12SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 143 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 81 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 329 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0093 Ohm
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de MOSFET HGD093N12SL

 

Principales características: HGD093N12SL

 ..1. Size:901K  cn hunteck
 hgd093n12sl.pdf pdf_icon

HGD093N12SL

HGD093N12SL P-1 120V N-Ch Power MOSFET Feature High Speed Power Switching, Logic Level 120 V VDS Enhanced Body diode dv/dt capability 7.5 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 9.3 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 81 A ID (Sillicon Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain

 9.1. Size:986K  cn hunteck
 hgd090ne6a hgi090ne6a.pdf pdf_icon

HGD093N12SL

HGD090NE6A , HGI090NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 7.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 57 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit

 9.2. Size:894K  cn hunteck
 hgd095ne4sl hgi095ne4sl.pdf pdf_icon

HGD093N12SL

HGD095NE4SL , HGI095NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 7.5 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 10 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 56 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 35 A ID (Package Limited) Lead Free, Halogen Free Application

 9.3. Size:962K  cn hunteck
 hgd098n10al hgi098n10al.pdf pdf_icon

HGD093N12SL

, P-1 HGD098N10AL HGI098N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 65.9 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectificati

MOSTRAR MÁS

Otros transistores... HGI080N10A , HGD080N10AL , HGI080N10AL , HGD090NE6A , HGI090NE6A , HGD090NE6AL , HGI090NE6AL , HGD092NE6AL , IRFB7545 , HGD095NE4SL , HGI095NE4SL , HGD098N10A , HGI098N10A , HGD098N10AL , HGI098N10AL , HGD098N10SL , HGI098N10SL .

 

 
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