HGI098N10AL Todos los transistores

 

HGI098N10AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGI098N10AL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 66 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 273 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0098 Ohm
   Paquete / Cubierta: TO-251
 

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HGI098N10AL Datasheet (PDF)

 ..1. Size:962K  cn hunteck
 hgd098n10al hgi098n10al.pdf pdf_icon

HGI098N10AL

, P-1HGD098N10ALHGI098N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness65.9 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectificati

 4.1. Size:961K  cn hunteck
 hgd098n10a hgi098n10a.pdf pdf_icon

HGI098N10AL

, P-1HGD098N10AHGI098N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching8.8RDS(on),typ mW Enhanced Body diode dv/dt capability67 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Cir

 5.1. Size:967K  cn hunteck
 hgd098n10sl hgi098n10sl.pdf pdf_icon

HGI098N10AL

HGD098N10SL , P-1HGI098N10SL100V N-Ch Power MOSFETFeature High Speed Power Switching, Logic Level100 VVDS Enhanced Body diode dv/dt capability8.3RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness10.8RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested67 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Synchronous Rectification

 9.1. Size:986K  cn hunteck
 hgd090ne6a hgi090ne6a.pdf pdf_icon

HGI098N10AL

HGD090NE6A , HGI090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness57 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

MOSTRAR MÁS

Otros transistores... HGI090NE6AL , HGD092NE6AL , HGD093N12SL , HGD095NE4SL , HGI095NE4SL , HGD098N10A , HGI098N10A , HGD098N10AL , HY1906P , HGD098N10SL , HGI098N10SL , HGD100N12S , HGD100N12SL , HGD110N08A , HGI110N08A , HGD110N08AL , HGI110N08AL .

History: SLP5N50S | IXFH28N60P3 | 2SK1905 | H4946S | IRF4104PBF | TDM3478 | STD90N03L-1

 

 
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