HGI098N10AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HGI098N10AL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 66 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 273 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0098 Ohm
   Paquete / Cubierta: TO-251

Búsqueda de reemplazo de MOSFET HGI098N10AL

HGI098N10AL Datasheet (PDF)

..1. Size:962K cn hunteck
hgd098n10al hgi098n10al.pdf

, P-1HGD098N10ALHGI098N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness65.9 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectificati

4.1. Size:961K cn hunteck
hgd098n10a hgi098n10a.pdf

, P-1HGD098N10AHGI098N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching8.8RDS(on),typ mW Enhanced Body diode dv/dt capability67 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Cir

5.1. Size:967K cn hunteck
hgd098n10sl hgi098n10sl.pdf

HGD098N10SL , P-1HGI098N10SL100V N-Ch Power MOSFETFeature High Speed Power Switching, Logic Level100 VVDS Enhanced Body diode dv/dt capability8.3RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness10.8RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested67 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Synchronous Rectification

9.1. Size:986K cn hunteck
hgd090ne6a hgi090ne6a.pdf

HGD090NE6A , HGI090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness57 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

9.2. Size:894K cn hunteck
hgd095ne4sl hgi095ne4sl.pdf

HGD095NE4SL , HGI095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness56 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested35 AID (Package Limited) Lead Free, Halogen FreeApplication

9.3. Size:1141K cn hunteck
hgd090ne6al hgi090ne6al.pdf

HGD090NE6AL , HGI090NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level 7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness58 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in

9.4. Size:908K cn hunteck
hgi090n06sl hgd090n06sl.pdf

HGI090N06SL HGD090N06SL, P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness61 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested40 AID (Package Limited) Lead Free, Halogen FreeApplication

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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