HGD098N10SL Todos los transistores

HGD098N10SL , P-1 HGI098N10SL 100V N-Ch Power MOSFET Feature High Speed Power Switching, Logic Level 100 V VDS Enhanced Body diode dv/dt capability 8.3 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 10.8 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 67 A ID (Sillicon Limited) Lead Free, Halogen Free Application Synchronous Rectification

, P-1 HGD098N10AL HGI098N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 65.9 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectificati

, P-1 HGD098N10A HGI098N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 8.8 RDS(on),typ mW Enhanced Body diode dv/dt capability 67 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Cir

HGD090NE6A , HGI090NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 7.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 57 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit

HGD093N12SL P-1 120V N-Ch Power MOSFET Feature High Speed Power Switching, Logic Level 120 V VDS Enhanced Body diode dv/dt capability 7.5 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 9.3 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 81 A ID (Sillicon Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain

HGD095NE4SL , HGI095NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 7.5 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 10 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 56 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 35 A ID (Package Limited) Lead Free, Halogen Free Application

HGD092NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic Level 7.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 52 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 46 A Lead Free, Halogen Free ID (Package Limited) Application Synchrono

HGD090NE6AL , HGI090NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 7.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 58 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in