FDS89161LZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS89161LZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 1.2 nS
   Cossⓘ - Capacitancia de salida: 44 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
   Paquete / Cubierta: SO-8

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FDS89161LZ Datasheet (PDF)

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fds89161lz.pdf

June 2011FDS89161LZDual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 mFeatures General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 160 m at VGS = 4.5 V, ID = 2.1 A that has been special tailored to minimize the on-state High

..2. Size:394K onsemi
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.1. Size:260K fairchild semi
fds89161.pdf

June 2011FDS89161Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 mFeatures General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance

6.2. Size:393K onsemi
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6.3. Size:2683K kexin
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SMD Type MOSFETN-Channel Enhancement MOSFET FDS89161 (KDS89161)SOP-8 Features VDS (V) = 100V ID = 2.7 A RDS(ON) 105m (VGS = 10V)1.50 0.15 RDS(ON) 160m (VGS = 4.5V) High performance trench technology for extremely low rDS(on) CDM ESD Protection Level > 2KV typicalG2D25 4D2 S2Q26 3D1 G17 2Q1D1 8 1S1atings Ta = 25

Otros transistores... FDS8884 , SP2700 , FDS8896 , SP2458 , FDS89141 , SP2112 , FDS89161 , SP2110 , 10N65 , SP2108 , FDS8928A , SP2107 , SP2106 , FDS8935 , FDS8949 , FDS8949F085 , FDS8958AF085 .

History: 2SJ135

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