FDS89161LZ Todos los transistores

June 2011 FDS89161LZ Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 m Features General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 160 m at VGS = 4.5 V, ID = 2.1 A that has been special tailored to minimize the on-state High

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

June 2011 FDS89161 Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 m Features General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFET N-Channel Enhancement MOSFET FDS89161 (KDS89161) SOP-8 Features VDS (V) = 100V ID = 2.7 A RDS(ON) 105m (VGS = 10V) 1.50 0.15 RDS(ON) 160m (VGS = 4.5V) High performance trench technology for extremely low rDS(on) CDM ESD Protection Level > 2KV typical G2 D2 5 4 D2 S2 Q2 6 3 D1 G1 7 2 Q1 D1 8 1 S1 atings Ta = 25