HGK030N06S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HGK030N06S
   Código: GK030N06S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 214 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 64 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 1540 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: TO-247

Búsqueda de reemplazo de MOSFET HGK030N06S

HGK030N06S Datasheet (PDF)

..1. Size:764K cn hunteck
hgk030n06s.pdf

HGK030N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching2.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability190 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switc

9.1. Size:918K cn hunteck
hgb037n10s hgk037n10s hgp037n10s.pdf

HGB037N10S HGK037N10S P-1,HGP037N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.8RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.1RDS(on),typ m 100% UIS Tested, 100% Rg Tested190 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap

9.2. Size:925K cn hunteck
hgb039n12s hgk039n12s hgp039n12s.pdf

,HGB039N12S HGK039N12S P-1HGP039N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching3.6RDS(on),TYP m Enhanced Body diode dv/dt capability197 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard

9.3. Size:1072K cn hunteck
hgb035n10a hgk035n10a hgp035n10a.pdf

, P-1HGB035N10A HGK035N10AHGP035N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ TO-263 mW Enhanced Avalanche Ruggedness3.3RDS(on),typ TO-247 mW 100% UIS Tested, 100% Rg Tested3.4RDS(on),typ TO-220 mW Lead Free184 AID (Sillicon Limited)Application120 AID (Package Lim

9.4. Size:851K cn hunteck
hgb039n08s hgk039n08s hgp039n08s.pdf

,HGB039N08S HGK039N08S P-1HGP039N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 2.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3.1RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.2RDS(on),typ m 100% UIS Tested, 100% Rg Tested187 AID (Sillicon Limited) Lead Free120 AID (Package Limit

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