HGN023NE6A Todos los transistores

 

HGN023NE6A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN023NE6A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 119 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 1849 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
   Paquete / Cubierta: DFN5X6
 

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HGN023NE6A Datasheet (PDF)

 ..1. Size:901K  cn hunteck
 hgn023ne6a.pdf pdf_icon

HGN023NE6A

HGN023NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.2RDS(on),typ mW Enhanced Body diode dv/dt capability162 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hi

 0.1. Size:1142K  cn hunteck
 hgn023ne6al.pdf pdf_icon

HGN023NE6A

HGN023NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching,Logic Level 2.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 164 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 AID (Package Limited) Lead Free, Halogen Free Drain Application Sy

 9.1. Size:763K  cn hunteck
 hgn027n06s.pdf pdf_icon

HGN023NE6A

HGN027N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching2.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability152 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

 9.2. Size:905K  cn hunteck
 hgn028ne6a.pdf pdf_icon

HGN023NE6A

HGN028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.4RDS(on),typ mW Enhanced Body diode dv/dt capability130 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hi

MOSTRAR MÁS

Otros transistores... HGM170N10AL , HGM210N12SL , HGM230N10AL , HGM290N10SL , HGN012N03AL , HGN016N04BL , HGN021N06SL , HGN022NE4SL , 75N75 , HGN023NE6AL , HGN024N06SL , HGN027N06S , HGN028N08A , HGN028NE6A , HGN028NE6AL , HGN029NE4SL , HGN032NE4S .

History: SFB046N80C3 | SSM3K315T | STN3PF06 | HD60N75 | APQ13SN50AH | IXTH88N15 | PTA26N60

 

 
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