HGN029NE4SL Todos los transistores

 

HGN029NE4SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN029NE4SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 1367 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm
   Paquete / Cubierta: DFN5X6
 

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HGN029NE4SL Datasheet (PDF)

 ..1. Size:773K  cn hunteck
 hgn029ne4sl.pdf pdf_icon

HGN029NE4SL

HGN029NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature2.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level3.2RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability140 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn

 9.1. Size:901K  cn hunteck
 hgn023ne6a.pdf pdf_icon

HGN029NE4SL

HGN023NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.2RDS(on),typ mW Enhanced Body diode dv/dt capability162 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hi

 9.2. Size:763K  cn hunteck
 hgn027n06s.pdf pdf_icon

HGN029NE4SL

HGN027N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching2.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability152 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

 9.3. Size:905K  cn hunteck
 hgn028ne6a.pdf pdf_icon

HGN029NE4SL

HGN028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.4RDS(on),typ mW Enhanced Body diode dv/dt capability130 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hi

MOSTRAR MÁS

Otros transistores... HGN022NE4SL , HGN023NE6A , HGN023NE6AL , HGN024N06SL , HGN027N06S , HGN028N08A , HGN028NE6A , HGN028NE6AL , K2611 , HGN032NE4S , HGN035N08A , HGN035N08AL , HGN035N10A , HGN035N10AL , HGN036N08A , HGN036N08AL , HGN036N08S .

History: BUK9K45-100E | HAF2011L | AP8600MT

 

 
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