HGN029NE4SL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGN029NE4SL 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 1367 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm
Encapsulados: DFN5X6
Búsqueda de reemplazo de HGN029NE4SL MOSFET
- Selecciónⓘ de transistores por parámetros
HGN029NE4SL datasheet
hgn029ne4sl.pdf
HGN029NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 2.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 3.2 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 140 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn
hgn023ne6a.pdf
HGN023NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.2 RDS(on),typ mW Enhanced Body diode dv/dt capability 162 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hi
hgn027n06s.pdf
HGN027N06S P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching 2.2 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 152 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch
hgn028ne6a.pdf
HGN028NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.4 RDS(on),typ mW Enhanced Body diode dv/dt capability 130 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hi
Otros transistores... HGN022NE4SL, HGN023NE6A, HGN023NE6AL, HGN024N06SL, HGN027N06S, HGN028N08A, HGN028NE6A, HGN028NE6AL, 8N60, HGN032NE4S, HGN035N08A, HGN035N08AL, HGN035N10A, HGN035N10AL, HGN036N08A, HGN036N08AL, HGN036N08S
History: HGN032NE4S
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q | ASDM30N120Q | ASDM30N120KQ | ASDM30N100KQ | ASDM30DN40E | ASDM30DN30E | ASDM3050KQ | ASDM2305 | ASDM2301 | ASDM2300ZA | ASDM20P13S | ASDM20N90Q | ASDM20N60
Popular searches
c2878 transistor | 2sc732 | 2sc1451 replacement | 6426 mosfet | b1565 | nce82h140 | 2n2369 equivalent | 2sd313 datasheet
