HGN040N06SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGN040N06SL
Código: GN040N06SL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 104 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 60 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
Carga de la puerta (Qg): 49 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 1200 pF
Resistencia entre drenaje y fuente RDS(on): 0.004 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de MOSFET HGN040N06SL
HGN040N06SL Datasheet (PDF)
hgn040n06sl.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HGN040N06SL P-160V N-Ch Power MOSFET60 VVDSFeature3.2RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.4RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability120 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn
hgn040n06s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HGN040N06S P-160V N-Ch Power MOSFET60 VFeature VDS3.4 Optimized for high speed switching RDS(on),typ mW125 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching
hgn042n10s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HGN042N10S P-1100V N-Ch Power MOSFET VDSFeature 100 V3.7 RDS(on),typ mW Optimized for high speed smooth switching112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching
hgn045ne4sl.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HGN045NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature3.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability101 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn
hgn042n10al.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HGN042N10AL P-1100V N-Ch Power MOSFET100 VVDSFeature3.4RDS(on),typ VGS=10V m Optimized for high speed smooth switching,Logic level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability129 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication
hgn046ne6a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HGN046NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching4.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability94 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switchin
hgn042n10a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HGN042N10A P-1100V N-Ch Power MOSFET100 VVDSFeature3.7RDS(on),typ m Optimized for high speed smooth switching128 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching and
hgn042n10sl.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
P-1HGN042N10SL100V N-Ch Power MOSFET100 VFeature VDS3.5 Optimized for high speed smooth switching,Logic Level RDS(on),typ VGS=10V mW4.4RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability116 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication
hgn046ne6al.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HGN046NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level3.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness95 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested45 AID (Pacakge Limited) Lead Free, Halogen FreeApplicationDrain Synchrono
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
![HGN040N06SL](https://alltransistors.com/images/us.png)
![HGN040N06SL](https://alltransistors.com/images/es.png)
![HGN040N06SL](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C