HGN046NE6AL Datasheet. Equivalente

 ..1. Size:893K  cn hunteck
 hgn046ne6al.pdf

HGN046NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 3.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 5.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 95 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A ID (Pacakge Limited) Lead Free, Halogen Free Application Drain Synchrono

 4.1. Size:893K  cn hunteck
 hgn046ne6a.pdf

HGN046NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 4.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 94 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 45 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switchin

 9.1. Size:1155K  cn hunteck
 hgn042n10s.pdf

HGN042N10S P-1 100V N-Ch Power MOSFET VDS Feature 100 V 3.7 RDS(on),typ mW Optimized for high speed smooth switching 112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application DC-DC Conversion Drain Hard Switching

 9.2. Size:774K  cn hunteck
 hgn045ne4sl.pdf

HGN045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 101 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn

 9.3. Size:786K  cn hunteck
 hgn042n10al.pdf

HGN042N10AL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 3.4 RDS(on),typ VGS=10V m Optimized for high speed smooth switching,Logic level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 129 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application

 9.4. Size:777K  cn hunteck
 hgn042n10a.pdf

HGN042N10A P-1 100V N-Ch Power MOSFET 100 V VDS Feature 3.7 RDS(on),typ m Optimized for high speed smooth switching 128 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application DC-DC Conversion Drain Hard Switching and

 9.5. Size:899K  cn hunteck
 hgn040n06s.pdf

HGN040N06S P-1 60V N-Ch Power MOSFET 60 V Feature VDS 3.4 Optimized for high speed switching RDS(on),typ mW 125 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching

 9.6. Size:1077K  cn hunteck
 hgn042n10sl.pdf

P-1 HGN042N10SL 100V N-Ch Power MOSFET 100 V Feature VDS 3.5 Optimized for high speed smooth switching,Logic Level RDS(on),typ VGS=10V mW 4.4 RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability 116 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application

 9.7. Size:779K  cn hunteck
 hgn040n06sl.pdf

HGN040N06SL P-1 60V N-Ch Power MOSFET 60 V VDS Feature 3.2 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.4 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 120 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn