HGN070N12S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGN070N12S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 438 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de HGN070N12S MOSFET
HGN070N12S Datasheet (PDF)
hgn070n12s.pdf

HGN070N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching6RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability99.3 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switc
hgn070n12sl.pdf

HGN070N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level6RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability7.5RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness99.3 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronou
hgn077n10sl.pdf

HGN077N10SL P-1100V N-Ch Power MOSFET100 VVDSFeature6.4RDS(on),typ VGS=10V m Optimized for high speed switching,Logic level7.8RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability86 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-
Otros transistores... HGN052N10SL , HGN053N06S , HGN053N06SL , HGN055N12S , HGN055N12SL , HGN058N08SL , HGN059N08A , HGN059N08AL , 20N60 , HGN070N12SL , HGN077N10SL , HGN080N08SL , HGN080N10A , HGN080N10AL , HGN080N10S , HGN080N10SL , HGN088N15S .
History: SFF75N06Z | AP6N023H | UPA2791GR | IPD038N06N3 | DH030N03P | ZVN0545ASTOA | IRHMB57260SE
History: SFF75N06Z | AP6N023H | UPA2791GR | IPD038N06N3 | DH030N03P | ZVN0545ASTOA | IRHMB57260SE



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
17n80c3 | bc107 transistor | rjp63g4 datasheet | 2sc1115 | c3998 transistor | 2sa679 | 2sc3181 | 2sb324