HGN070N12SL Todos los transistores

 

HGN070N12SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN070N12SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: DFN5X6

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HGN070N12SL Datasheet (PDF)

 ..1. Size:764K  cn hunteck
hgn070n12sl.pdf

HGN070N12SL
HGN070N12SL

HGN070N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level6RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability7.5RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness99.3 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronou

 4.1. Size:761K  cn hunteck
hgn070n12s.pdf

HGN070N12SL
HGN070N12SL

HGN070N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching6RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability99.3 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switc

 9.1. Size:788K  cn hunteck
hgn077n10sl.pdf

HGN070N12SL
HGN070N12SL

HGN077N10SL P-1100V N-Ch Power MOSFET100 VVDSFeature6.4RDS(on),typ VGS=10V m Optimized for high speed switching,Logic level7.8RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability86 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-

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