HGN080N10A Todos los transistores

 

HGN080N10A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN080N10A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 76 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: DFN5X6
 

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HGN080N10A Datasheet (PDF)

 ..1. Size:898K  cn hunteck
 hgn080n10a.pdf pdf_icon

HGN080N10A

P-1HGN080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching6.8RDS(on),typ mW Enhanced Body diode dv/dt capability76 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in Telecoms and I

 0.1. Size:893K  cn hunteck
 hgn080n10al.pdf pdf_icon

HGN080N10A

HGN080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74.4 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

 5.1. Size:920K  cn hunteck
 hgn080n10sl.pdf pdf_icon

HGN080N10A

HGN080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

 5.2. Size:912K  cn hunteck
 hgn080n10s.pdf pdf_icon

HGN080N10A

HGN080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability6.7RDS(on),typ mW Enhanced Avalanche Ruggedness74 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

MOSTRAR MÁS

Otros transistores... HGN055N12SL , HGN058N08SL , HGN059N08A , HGN059N08AL , HGN070N12S , HGN070N12SL , HGN077N10SL , HGN080N08SL , IRF640 , HGN080N10AL , HGN080N10S , HGN080N10SL , HGN088N15S , HGN088N15SL , HGN090AE6AL , HGN090N06SL , HGN090NE6A .

History: 2N5640 | FMI13N60E | DM10N65C-2

 

 
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