HGN110N08A Todos los transistores

 

HGN110N08A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN110N08A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 219 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
   Paquete / Cubierta: DFN5X6
 

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HGN110N08A Datasheet (PDF)

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 hgn110n08a.pdf pdf_icon

HGN110N08A

HGN110N08A P-180V N-Ch Power MOSFETFeature High Speed Power Switching80 VVDS Enhanced Body diode dv/dt capability9.6RDS(on),typ mW Enhanced Avalanche Ruggedness48 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC i

 0.1. Size:914K  cn hunteck
 hgn110n08al.pdf pdf_icon

HGN110N08A

HGN110N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness48 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

 7.1. Size:779K  cn hunteck
 hgn110n10sl.pdf pdf_icon

HGN110N08A

HGN110N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level9.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness62 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

 9.1. Size:1137K  cn hunteck
 hgn119n15s.pdf pdf_icon

HGN110N08A

HGN119N15SP-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 11.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 66 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain H

MOSTRAR MÁS

Otros transistores... HGN093N12SL , HGN095NE4SL , HGN098N10A , HGN098N10AL , HGN098N10SL , HGN099N15S , HGN100N12S , HGN100N12SL , 7N65 , HGN110N08AL , HGN110N10SL , HGN115N15S , HGN115N15SL , HGN119N15S , HGN120N06SL , HGN120N10A , HGN120N10AL .

History: MTP9575J3 | QM2520C1 | OSG65R580DF | 2N7002TESGP | AM2391P

 

 
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