HGN110N08A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGN110N08A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 219 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm

Encapsulados: DFN5X6

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HGN110N08A datasheet

 ..1. Size:902K  cn hunteck
 hgn110n08a.pdf pdf_icon

HGN110N08A

HGN110N08A P-1 80V N-Ch Power MOSFET Feature High Speed Power Switching 80 V VDS Enhanced Body diode dv/dt capability 9.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 48 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/DC i

 0.1. Size:914K  cn hunteck
 hgn110n08al.pdf pdf_icon

HGN110N08A

HGN110N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 9.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 13.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 48 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Re

 7.1. Size:779K  cn hunteck
 hgn110n10sl.pdf pdf_icon

HGN110N08A

HGN110N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 9.2 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 11 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 62 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous

 9.1. Size:1137K  cn hunteck
 hgn119n15s.pdf pdf_icon

HGN110N08A

HGN119N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 11.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 66 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain H

MOSTRAR MÁS

Otros transistores... HGN093N12SL, HGN095NE4SL, HGN098N10A, HGN098N10AL, HGN098N10SL, HGN099N15S, HGN100N12S, HGN100N12SL, IRF630, HGN110N08AL, HGN110N10SL, HGN115N15S, HGN115N15SL, HGN119N15S, HGN120N06SL, HGN120N10A, HGN120N10AL