HGN115N15SL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGN115N15SL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 114 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 257 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm

Encapsulados: DFN5X6

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HGN115N15SL datasheet

 ..1. Size:755K  cn hunteck
 hgn115n15sl.pdf pdf_icon

HGN115N15SL

HGN115N15SL P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, Logic Level 8 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 9.4 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 73.9 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronou

 4.1. Size:1146K  cn hunteck
 hgn115n15s.pdf pdf_icon

HGN115N15SL

HGN115N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 9.6 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 70 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Har

 9.1. Size:914K  cn hunteck
 hgn110n08al.pdf pdf_icon

HGN115N15SL

HGN110N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 9.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 13.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 48 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Re

 9.2. Size:902K  cn hunteck
 hgn110n08a.pdf pdf_icon

HGN115N15SL

HGN110N08A P-1 80V N-Ch Power MOSFET Feature High Speed Power Switching 80 V VDS Enhanced Body diode dv/dt capability 9.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 48 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/DC i

MOSTRAR MÁS

Otros transistores... HGN098N10SL, HGN099N15S, HGN100N12S, HGN100N12SL, HGN110N08A, HGN110N08AL, HGN110N10SL, HGN115N15S, STP75NF75, HGN119N15S, HGN120N06SL, HGN120N10A, HGN120N10AL, HGN130N12S, HGN130N12SL, HGN155N15S, HGN170A10AL