HGN115N15SL Todos los transistores

 

HGN115N15SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN115N15SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 114 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 257 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
   Paquete / Cubierta: DFN5X6
 

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HGN115N15SL Datasheet (PDF)

 ..1. Size:755K  cn hunteck
 hgn115n15sl.pdf pdf_icon

HGN115N15SL

HGN115N15SL P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level8RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability9.4RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness73.9 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronou

 4.1. Size:1146K  cn hunteck
 hgn115n15s.pdf pdf_icon

HGN115N15SL

HGN115N15S P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 9.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 70 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Har

 9.1. Size:914K  cn hunteck
 hgn110n08al.pdf pdf_icon

HGN115N15SL

HGN110N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness48 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

 9.2. Size:902K  cn hunteck
 hgn110n08a.pdf pdf_icon

HGN115N15SL

HGN110N08A P-180V N-Ch Power MOSFETFeature High Speed Power Switching80 VVDS Enhanced Body diode dv/dt capability9.6RDS(on),typ mW Enhanced Avalanche Ruggedness48 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC i

MOSTRAR MÁS

Otros transistores... HGN098N10SL , HGN099N15S , HGN100N12S , HGN100N12SL , HGN110N08A , HGN110N08AL , HGN110N10SL , HGN115N15S , 12N60 , HGN119N15S , HGN120N06SL , HGN120N10A , HGN120N10AL , HGN130N12S , HGN130N12SL , HGN155N15S , HGN170A10AL .

History: AP4455GMT-HF | HFP730U | S68N08ZRP | NVTFS4C10N

 

 
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