HGP042N10AL Todos los transistores

 

HGP042N10AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGP042N10AL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 231 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 166 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 893 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: TO-220
 

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HGP042N10AL Datasheet (PDF)

 ..1. Size:783K  cn hunteck
 hgp042n10al.pdf pdf_icon

HGP042N10AL

HGP042N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS Optimized for high speed smooth switching,Logic level3.6RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability4.8RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness166 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drai

 4.1. Size:835K  cn hunteck
 hgb042n10a hgp042n10a.pdf pdf_icon

HGP042N10AL

,HGB042N10A HGP042N10A P-1100V N-Ch Power MOSFET100 VVDSFeatureTO-263 3.4RDS(on),typ m Optimized for high speed smooth switchingTO-220 3.7RDS(on),typ m Enhanced Body diode dv/dt capability167 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication DC-DC Conversion Drain Hard Swit

 5.1. Size:802K  cn hunteck
 hgb042n10s hgp042n10s.pdf pdf_icon

HGP042N10AL

,HGB042N10S HGP042N10S P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 3.4RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 3.7RDS(on),typ m Enhanced Avalanche Ruggedness161 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-220TO-263 Hard Switching and

 9.1. Size:1049K  cn hunteck
 hgb043n15s hgk043n15s hgp043n15s.pdf pdf_icon

HGP042N10AL

, P-1HGB043N15S HGK043N15SHGP043N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.2RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.3RDS(on),typ mW 100% UIS Tested, 100% Rg Tested206 AID (Sillicon Limited) Lead FreeApplication Synchronous

MOSTRAR MÁS

Otros transistores... HGN320N20S , HGN320N20SL , HGN480N15M , HGN640N25S , HGN650N15S , HGN650N15SL , HGP028NE6AL , HGP035N08AL , 18N50 , HGP045NE4SL , HGP050N10AL , HGP070N12SL , HGP080N10S , HGP080N10SL , HGP098N10S , HGP100N12SL , HGP130N12SL .

History: PA410BD | PMGD780SN | HFD2N65S | SLU60R380S2 | MS65R120C | H5N3003P | TPW65R075DFD

 

 
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