2SK3116B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3116B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2.5 V
   Qgⓘ - Carga de la puerta: 22 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO220AB TO263

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2SK3116B Datasheet (PDF)

..1. Size:265K renesas
2sk3116b.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

7.1. Size:70K nec
2sk3116.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3116SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3116 is N-channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3116 TO-220ABdesigned for high voltage applications such as switching power2SK3116-S TO-262supply, AC adapter.2SK3116-ZJ TO-

7.2. Size:357K inchange semiconductor
2sk3116-zj.pdf

isc N-Channel MOSFET Transistor 2SK3116-ZJFEATURESDrain Current : I = 7.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

7.3. Size:288K inchange semiconductor
2sk3116.pdf

isc N-Channel MOSFET Transistor 2SK3116FEATURESDrain Current : I = 7.5A@ T =25D CDrain Source Voltage: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

7.4. Size:282K inchange semiconductor
2sk3116-s.pdf

isc N-Channel MOSFET Transistor 2SK3116-SFEATURESDrain Current : I = 7.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

Otros transistores... FDS8949F085 , FDS8958AF085 , SP2103 , SP2102 , FDS8958B , SP2013 , SP07N65 , FDS8978 , AO4468 , FDS8984 , SDU07N65 , FDS8984F085 , SDU06N60 , FDS9400A , FDS9431A , FDS9431AF085 , FDS9926A .

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