2SK2936 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2936
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 35 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 200 nS
Cossⓘ - Capacitancia de salida: 1050 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de 2SK2936 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK2936 datasheet
..1. Size:121K renesas
2sk2936.pdf 
2SK2936 Silicon N Channel MOS FET High Speed Power Switching REJ03G1050-0400 (Previous ADE-208-559B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.010 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2
..2. Size:279K inchange semiconductor
2sk2936.pdf
isc N-Channel MOSFET Transistor 2SK2936 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.1. Size:121K renesas
2sk2937.pdf
2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 (Previous ADE-208-560C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS =0.026 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2
8.2. Size:109K renesas
rej03g1052 2sk2938lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. Size:3170K renesas
2sk293.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.4. Size:87K renesas
2sk2930.pdf
2SK2930 Silicon N Channel MOS FET High Speed Power Switching REJ03G1044-0500 (Previous ADE-208-553C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS =0.020 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source
8.5. Size:95K renesas
2sk2938.pdf
2SK2938(L), 2SK2938(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1052-0400 (Previous ADE-208-561B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.026 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(
8.6. Size:102K renesas
rej03g1044 2sk2930ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.7. Size:87K renesas
2sk2933.pdf
2SK2933 Silicon N Channel MOS FET High Speed Power Switching REJ03G1047-0400 (Previous ADE-208-556B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.040 typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00 Sep 07, 2
8.8. Size:101K renesas
rej03g1045 2sk2931ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. Size:136K renesas
rej03g1051 2sk2937ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.10. Size:87K renesas
2sk2934.pdf
2SK2934 Silicon N Channel MOS FET High Speed Power Switching REJ03G1048-0400 (Previous ADE-208-557B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.026 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2
8.11. Size:121K renesas
2sk2935.pdf
2SK2935 Silicon N Channel MOS FET High Speed Power Switching REJ03G1049-0400 (Previous ADE-208-588B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.020 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2
8.12. Size:87K renesas
2sk2932.pdf
2SK2932 Silicon N Channel MOS FET High Speed Power Switching REJ03G1046-0400 (Previous ADE-208-555B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2
8.13. Size:142K renesas
rej03g1053 2sk2939lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.14. Size:128K renesas
2sk2939.pdf
2SK2939(L), 2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1053-0600 (Previous ADE-208-562D) Rev.6.00 Sep 07, 2005 Features Low on-resistance RDS =0.020 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(
8.15. Size:87K renesas
2sk2931.pdf
2SK2931 Silicon N Channel MOS FET High Speed Power Switching REJ03G1045-0500 (Previous ADE-208-554C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS =0.010 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source
8.16. Size:279K inchange semiconductor
2sk2937.pdf
isc N-Channel MOSFET Transistor 2SK2937 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.17. Size:288K inchange semiconductor
2sk2930.pdf
isc N-Channel MOSFET Transistor 2SK2930 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.18. Size:279K inchange semiconductor
2sk2933.pdf
isc N-Channel MOSFET Transistor 2SK2933 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 52m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.19. Size:282K inchange semiconductor
2sk2938l.pdf
isc N-Channel MOSFET Transistor 2SK2938L FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.20. Size:356K inchange semiconductor
2sk2939s.pdf
isc N-Channel MOSFET Transistor 2SK2939S FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.21. Size:356K inchange semiconductor
2sk2938s.pdf
isc N-Channel MOSFET Transistor 2SK2938S FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.22. Size:282K inchange semiconductor
2sk2939l.pdf
isc N-Channel MOSFET Transistor 2SK2939L FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.23. Size:279K inchange semiconductor
2sk2934.pdf
isc N-Channel MOSFET Transistor 2SK2934 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.24. Size:279K inchange semiconductor
2sk2935.pdf
isc N-Channel MOSFET Transistor 2SK2935 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.25. Size:278K inchange semiconductor
2sk2932.pdf
isc N-Channel MOSFET Transistor 2SK2932 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.26. Size:289K inchange semiconductor
2sk2931.pdf
isc N-Channel MOSFET Transistor 2SK2931 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
Otros transistores... 2SK2928, 2SK2929, 2SK2930, 2SK2931, 2SK2932, 2SK2933, 2SK2934, 2SK2935, 4N60, 2SK2937, 2SK2938, 2SK2939, 2SK2940, 2SK2955, 2SK2956, 2SK2957, 2SK2958
