HGW100N12S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGW100N12S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 214 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 109 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 235 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO-262

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HGW100N12S datasheet

 ..1. Size:780K  cn hunteck
 hgw100n12s.pdf pdf_icon

HGW100N12S

HGW100N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching TO-262 8.6 RDS(on),typ m Enhanced Body diode dv/dt capability 109 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain Pin2 TO-262

 0.1. Size:787K  cn hunteck
 hgw100n12sl.pdf pdf_icon

HGW100N12S

HGW100N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching,Logic level 7.8 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 8.6 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 109 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switchin

 9.1. Size:804K  cn hunteck
 hgw105n15m.pdf pdf_icon

HGW100N12S

HGW105N15M P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-262 8.8 RDS(on),typ m Enhanced Body diode dv/dt capability 120 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain Pin2

 9.2. Size:808K  cn hunteck
 hgw105n15sl.pdf pdf_icon

HGW100N12S

HGW105N15SL P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching, Logic Level 9 RDS(on),typ m Enhanced Body diode dv/dt capability 9 ID (Sillicon Limited) m Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synchronous Rectification

MOSTRAR MÁS

Otros transistores... HGT025N10A, HGT035N12S, HGT041N15S, HGT055N15S, HGW053N06SL, HGW055N10SL, HGW059N12S, HGW059N12SL, IRF9540, HGW100N12SL, HGW105N15M, HGW105N15SL, HGW130N12S, HGW190N15S, HGW190N15SL, HGW195N15S, HTA1K2P10