HTJ1K3P03 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HTJ1K3P03

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.04 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 41 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm

Encapsulados: SOT-23

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HTJ1K3P03 datasheet

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HTJ1K3P03

HTJ1K3P03 P-1 30V P-Ch Power MOSFET -30 V VDS Feature 100 RDS(on),typ VGS=10V m High Speed Power Switching, Logic Level 140 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness -3.1 A ID (Sillicon Limited) Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit BLDC Motor SOT-23 Drain D S Gate G Part Number Pac

 9.1. Size:547K  cn hunteck
 htj1k0p02.pdf pdf_icon

HTJ1K3P03

HTJ1K0P02 P-1 20V P-Ch Power MOSFET -20 V VDS Feature 83 RDS(on),typ VGS=4.5V m High Speed Power Switching, Logic Level 110 RDS(on),typ VGS=2.5V m Enhanced Avalanche Ruggedness -3 A ID (Sillicon Limited) Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit BLDC Motor SOT-23 Drain D S Gate G Part Number Packa

 9.2. Size:572K  cn hunteck
 htj1k5p06.pdf pdf_icon

HTJ1K3P03

HTJ1K5P06 P-1 60V P-Ch Power MOSFET -60 V VDS Feature 125 RDS(on),typ VGS=10V m High Speed Power Switching, Logic Level 160 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness -2.2 A ID (Sillicon Limited) Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit BLDC Motor SOT-23 Drain D S Gate G Part Number Pa

Otros transistores... HTD360N10, HTD410P06, HTD440P04, HTD480N06P, HTD600N06, HTD760P10T, HTD950P06, HTJ1K0P02, 5N60, HTJ1K5P06, HTJ200N02, HTJ270N03, HTJ300N02, HTJ350N03, HTJ440P02, HTJ440P02E, HTJ440P03